KRF4905S [KEXIN]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | KRF4905S |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总2页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
HEXFET Power MOSFET
KRF4905S
TO-263
Unit: mm
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Features
Advanced Process Technology
Surface Mount
175 Operating Temperature
Fast Switching
+0.1
1.27
-0.1
0.1max
P-Channel
+0.1
0.81
-0.1
Fully Avalanche Rated
2.54
1 gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 drain
3 source
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ -10V,Tc = 25
Continuous Drain Current, VGS @ -10V,Tc = 100
Pulsed Drain Current*1
Symbol
ID
Rating
-74
-52
-260
3.8
Unit
A
ID
IDM
Power Dissipation Ta = 25
PD
W
200
1.3
Power Dissipation Tc = 25
Linear Derating Factor
W/
V
Gate-to-Source Voltage
VGS
EAS
20
Single Pulse Avalanche Energy*4
Avalanche Current *1
930
-38
20
mJ
A
IAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt *2
Operating Junction and Storage Temperature Range
Junction-to-Case
EAR
mJ
V/ns
dv/dt
TJ,TSTG
-5
-55 to + 175
R
R
JC
JA
0.75
40
/W
/W
Junction-to-Ambient
*1Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
-38A, di/dt
-270A/ s, VDD
V(BR)DSS,TJ
175
* 3 When mounted on 1" square PCB
*4 Starting TJ = 25 , L = 1.3mH,RG = 25 , IAS = -38A.
1
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SMD Type
Transistors
KRF4905S
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VGS = 0V, ID =- 250
V(BR)DSS/ TJ ID = -1mA,Reference to 25
Min
-55
Typ
Max
Unit
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V(BR)DSS
A
-0.05
V/
m
RDS(on)
VGS(th)
gfs
VGS = -10V, ID = -38A*1
0.02
-4
-2.0
21
V
VDS = VGS, ID = -250
VDS = -25V, ID = -38A*1
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150
VGS = 20V
A
Forward Transconductance
S
-25
-250
100
-100
180
32
Drain-to-Source Leakage Current
IDSS
A
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
nA
VGS = -20V
Qg
Qgs
Qgd
td(on)
tr
ID = -38A
nC
ns
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS = -44V
VGS = -10V,*1
86
VDD = -28V
18
99
Rise Time
ID = -38A
Turn-Off Delay Time
td(off)
tf
61
RG =2.5
Fall Time
96
RD =0.72 *1
Internal Source Inductance
Input Capacitance
LS
Between lead,and center of die contact
VGS = 0V
7.5
nH
pF
Ciss
Coss
Crss
3400
1400
640
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
f = 1.0MHz
IS
-74
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
A
ISM
-260
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
VSD
trr
-1.6
130
350
V
TJ = 25 , IS = -38A, VGS = 0V*1
TJ = 25 , IF = -38A
89
ns
nC
Qrr
ton
230
di/dt = 100A/ s*1
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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