KRF7104 [KEXIN]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	KRF7104
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总2页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

ICIC

HEXFET Power MOSFET

KRF7104

Features

Adavanced Process Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

1: Source 1

2: Gate 1

3: Source 2

4: Gate 2

7,8: Drain 1

5,6: Drain 2

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

-2.3

Unit

Continuous Drain Current, V^GS@ 10V @ Ta = 25

Continuous Drain Current, V^GS@ 10V @ Ta = 70

Pulsed Drain Current *1

-1.8

I^DM

-10

2.0

Power Dissipation

@T^C= 25

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt *3

0.016

VGS

d^v/dt

-3

V/nS

Junction and Storage Temperature Range

Maximum Junction-to-Ambient *2

T^J, TSTG

-55 to + 150

62.5

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 Surface mounted on FR-4 board, t 10sec.

*3 ISD

-2.3A, di/dt

100A/ s, VDD V(BR)DSS,TJ

150

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SMD Type

ICIC

KRF7104

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VGS = 0V, ID = -250

Min

-20

Typ

Max

Unit

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

V^(BR)DSS

-0.015

0.19

V(BR)DSS/ TJ ID = -1mA,Reference to 25

VGS = -10V, ID = -1.0A*1

R^DS(on)

V^GS= -4.5V, ID = -0.50A*1

0.25

0.40

-3.0

Static Drain-to-Source On-Resistance

0.30

Gate Threshold Voltage

V^GS(th)

g^fs

-1.0

VDS = VGS, ID = -250

Forward Transconductance

VDS = -15V, ID = -2.3A*1

V^DS= -16V, VGS = 0V

V^DS= -16V, VGS = 0V, TJ = 55

V^GS= -12V

2.5

-2.0

-25

Drain-to-Source Leakage Current

I^DSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

-100

100

I^GSS

V^GS= 12V

Q^g

Q^gs

Q^gd

t^d(on)

t^r

ID = -2.3A

9.3

1.6

3.0

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

VDS = -10V

VGS = -10V *

VDD = -10V

ID = -1.0A

Turn-Off Delay Time

Fall Time

t^d(off)

t^f

RG = 6

RD = 10

Internal Source Inductance

Internal Drain Inductance

L^S

L^D

4.0

6.0

Input Capacitance

C^iss

C^oss

C^rss

VGS = 0V

290

210

Output Capacitance

VDS = -15V

f = 1.0MHz

Reverse Transfer Capacitance

I^S

-2.0

-9.2

Continuous Source Current Body Diode)

Pulsed Source Current Body Diode) *2

I^SM

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

V^SD

t^rr

-1.2

100

140

TJ = 25 , IS = -1.5A, VGS = 0V*1

TJ = 25 , IF =-1.5A

Q^rr

di/dt = -100A/ s*1

*1 Pulse width

300 s; duty cycle

2%.

*2 Repetitive rating; pulse width limited by max. junction temperature.

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