KSC1730-R [KEXIN]
NPN Transistors;
| 型号： | KSC1730-R |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：1044K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIP Type
Transistors
NPN Transistors
KSC1730-HF
TO-92
Unit: mm
+0.25
–0.15
4.58
■ Features
● High Current Gain Bandwidth Product : fT=1100MHz
0.46± 0.10
● Output Capacitance : COB=1.5pF (MAX.)
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.10
–0.05
1.27TYP
1.27TYP
[1.27± 0.20]
0.38
1 2 3
[1.27± 0.20]
3.60± 0.20
1. Emitter
2. Collector
3. Base
(R2.29)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
30
15
Collector - Emitter Voltage
Emitter - Base Voltage
5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
50
mA
P
C
250
mW
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
30
15
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 5 mA， I = 0
= 100μA， I
E= 0
B
I
E
C= 0
I
CBO
EBO
V
V
CB= 30 V , I
EB= 5V , I
E
= 0
0.1
0.1
0.5
1.2
240
1.5
20
uA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=10 mA, I
B=1mA
V
C
=10 mA, I
B=1mA
h
FE
ob
c-rbb'
V
V
V
V
CE= 10V, I
CB= 10V, I
CE= 10V, I
CE= 10V, I
C
= 5mA
40
Collector output capacitance
Collector-Base Time Constant
Transition frequency
C
E= 0,f=1MHz
pF
ps
C
E
= 5mA,f=31.9MHz
= 5mA
10
800 1100
f
T
C
MHz
■ Classification of hfe
Type
KSC1730-R
KSC1730-O
70-140
KSC1730-Y
120-240
Range
40-80
1
www.kexin.com.cn
DIP Type
Transistors
NPN Transistors
KSC1730-HF
■ Typical Characterisitics
10
1000
VCE = 10V
IB = 90uA
IB = 80uA
IB = 70uA
IB = 60uA
8
6
4
2
0
100
IB = 50uA
IB = 40uA
IB = 30uA
IB = 20uA
IB = 10uA
10
1
10
0
2
4
6
8
10
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
f=1MHz
IE=0
IC=10IB
VBE(sat)
1
1
VCE(sat)
0.1
0.01
0.1
0.1
1
10
1
10
100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
1000
100
0.1
1
10
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
2
www.kexin.com.cn
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