KST8050 [KEXIN]
NPN Transistors; NPN晶体管
| 型号： | KST8050 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
KST8050
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Collector Current: IC=1.5A
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
40
25
V
5
V
Collector Current -Continuous
Collector Dissipation
1.5
A
PC
0.3
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Testconditons
Min
40
25
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter-base cut-off current
IC = 100 ìA , IE = 0
IC = 1mA , IB = 0
V
IE = 100 ìA , IC = 0
VCB = 40 V , IE = 0
VCE = 20 V , IB = 0
VEB = 5 V , IC = 0
V
0.1
0.1
0.1
400
A
ICEO
A
IEBO
A
VCE = 1 V , IC = 100 mA
VCE = 1 V , IC = 800 mA
120
40
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = 800 mA , IB = 80 mA
VBE(sat) IC = 800 mA , IB = 80 mA
0.5
1.2
V
V
fT
VCE = 10 V , IC = 50 mA , f = 30 MHz
100
MHz
hFE Classification
Y1
Marking
Rank
L
H
J
hFE
120 200
200 350
300 400
1
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SMD Type
Transistors
KST8050
Typical Characteristics
Fig.2 DC Current Gain
Fig.1 Static Characteristic
Fig.4 Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Fig.3 Base Emitter ON Voltage
Fig.5 Current Gain Bandwidth Product
Fig.6 Colletor Output Capacitance
2
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