KST8550S [KEXIN]
PNP Transistors; PNP晶体管
| 型号： | KST8550S |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总2页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
KST8550S
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Collector current: IC-=0.5A
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-40
Unit
V
-25
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.5
A
PC
0.3
W
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
IC=-100 A, IE=0
Min
-40
-25
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
IC=-1mA, IB=0
V
V
IE=-100 A, IC=0
VCB=-40V, IE=0
VCE=-20V, IB=0
VEB=-3V, IC=0
-0.1
-0.1
-0.1
350
A
Collector cut-off current
A
Emitter cut-off current
A
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
120
50
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC=-500mA, IB=-50mA
VBE(sat) IC=-500mA, IB=-50mA
-0.5
-1.2
V
V
fT
VCE= -6V, IC= -20mA,f=30MHz
150
MHz
hFE Classification
2TY
Marking
Rank
L
H
hFE
120 200
200 350
1
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SMD Type
Transistors
KST8550S
Typical Characteristics
Fig.1 Static Characteristic
Fig.2 DC Current Gain
Fig.4 Current Gain Bandwidth Product
Fig.3 Bacse-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
2
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