KST9012 [TYSEMI]
Excellent hFE liearity Collector Current :IC=-0.5A; 优秀的hFE liearity集电极电流： IC = -0.5A
| 型号： | KST9012 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Excellent hFE liearity Collector Current :IC=-0.5A |
| 文件： | 总2页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T
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Product specification
KST9012
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Excellent hFE liearity
Collector Current :IC=-0.5A
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-40
Unit
V
-25
V
-5
V
Collector Current to Continuous
Collector Power Dissipation
Junction Temperature
-500
300
mA
mW
PC
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Testconditons
Min
-40
-25
-5
Typ
Max
Unit
Collector - base breakdown voltage
Collector - emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut - off current
Collector cut - off current
Emitter cut - off current
Ic= -100ìA, IE=0
IC= -1 mA , IB=0
IE= -100ìA, IC=0
VCB=- 40V, IE=0
VCB=-20V, IE=0
VEB=- 5V, IC=0
V
V
V
-0.1
-0.1
-0.1
400
-0.6
-1.2
5
A
ICEO
A
A
IEBO
DC current gain
hFE
VCE=-1V, IC= -50mA
120
150
Collector - emitter saturation voltage
Base - emitter voltage
VCE(sat)
VBE(sat)
Cob
IC= -500 mA, IB= -50mA
IC= -500 mA, IB=- 50mA
VCB=-10V,IE=0,f=1MHz
VCE=-6V, IC=-20mA,f=30MHz
V
V
Collector output capacitance
Transition frequency
pF
f T
MHz
hFE Classification
2T1
H
Marking
Rank
L
J
hFE
120 200
200 350
300 400
http://www.twtysemi.com
1 of 2
sales@twtysemi.com
4008-318-123
T
Transistor
r
a
n
s
i
s
t
Io
Cr
s
Product specification
KST9012
Typical Characteristics
Fig.1 Static Characteristic
Fig.2 DC Current Gain
Fig.3 Base-Emitter Saturation Voltage
Colletor- Emitter Saturation Voltage
Fig.4 Current Gain Bandwidth Product
http://www.twtysemi.com
2 of 2
sales@twtysemi.com
4008-318-123
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