KST9012_15 [KEXIN]

PNP Transistors;
KST9012_15
型号: KST9012_15
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

PNP Transistors

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中文:  中文翻译
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SMD Type  
SMD Type  
Transistors  
PNP Transistors  
KST9012  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Excellent hFE liearity  
Collector Current :IC=-0.5A  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-40  
Unit  
V
-25  
V
-5  
V
Collector Current to Continuous  
Collector Power Dissipation  
Junction Temperature  
-500  
300  
mA  
mW  
PC  
Tj  
150  
Storage Temperature  
Tstg  
-55 to 150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Testconditions  
Ic= -100u A, I E=0  
Min  
-40  
-25  
-5  
Typ  
Max  
Unit  
V
Collector - base breakdown voltage  
Collector - emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector cut - off current  
Collector cut - off current  
Emitter cut - off current  
IC= -1 mA , IB=0  
V
IE= -100uA, I C=0  
V
VCB=- 40V, IE=0  
-0.1  
-1  
A
ICEO  
VCB=-20V, IE=0  
A
IEBO  
VEB=- 5V, IC=0  
-0.1  
400  
-0.6  
-1.2  
5
A
DC current gain  
hFE  
VCE=-1V, IC= -50mA  
IC= -500 mA, IB= -50mA  
IC= -500 mA, IB=- 50mA  
VCB=-10V,IE=0,f=1MHz  
VCE=-6V, IC=-20mA,f=30MHz  
120  
150  
Collector - emitter saturation voltage  
Base - emitter voltage  
VCE(sat)  
VBE(sat)  
Cob  
V
V
Collector output capacitance  
Transition frequency  
pF  
f T  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
KST9012  
200-350  
KST9012-L  
120-200  
KST9012-H  
144-202  
KST9012-J  
300-400  
2T1  
1
www.kexin.com.cn  
SMD Type  
SMD Type  
Transistors  
KST9012  
Typical Characteristics  
hFE —— IC  
Static Characteristic  
-100  
-80  
-60  
-40  
-20  
-0  
400  
COMMON EMITTER  
VCE=-1V  
COMMON  
EMITTER  
Ta=25  
-400uA  
-350uA  
Ta=100℃  
Ta=25℃  
300  
200  
100  
0
-300uA  
-250uA  
-200uA  
-150uA  
-100uA  
IB=-50uA  
-1  
-10  
-100  
-500  
-0  
-1  
-5  
0
-4  
-8  
-12  
-16  
-20  
COLLECTOR CURRENT IC (mA)  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
IC  
VBEsat ——  
VCEsat —— IC  
-1000  
-100  
-10  
-1.2  
-0.8  
-0.4  
-0.0  
Ta=25℃  
Ta=100℃  
Ta=100℃  
Ta=25℃  
β=10  
-500  
β=10  
-500  
-1  
-10  
-100  
-1  
-10  
-100  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
IC  
fT ——  
Cob/ Cib ——  
VCB/ VEB  
500  
100  
10  
1
VCE=-6V  
Ta=25 oC  
f=1MHz  
IE=0/ IC=0  
Ta=25℃  
Cib  
Cob  
100  
-20  
-0.1  
-1  
-10  
-10  
-100  
COLLECTOR CURRENT IC (mA)  
REVERSE VOLTAGE  
V
(V)  
Pc —— Ta  
400  
300  
200  
100  
0
25  
50  
75  
100  
125  
150  
AMBIENT TEMPERATURE Ta ()  
2
www.kexin.com.cn  

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