KTA1070-O [KEXIN]
PNP Transistors;
| 型号： | KTA1070-O |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总3页 (文件大小：1278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIP Type
Transistors
PNP Transistors
KTA1070
TO-92L
Unit:mm
4.9 ± 0.2
0.7 ±0.1
■ Features
● Low collector output capacitance
● High voltage and High fT
● Complementary to KTC3467
0.45 ±0.1
2
1
3
1.27
2.54 ±0.1
1.60 (max)
Emitter
1.
2.Collector
3.Base
4.0(min)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
-200
-200
-5
Unit
V
Collector - Base Voltage
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
-100
-200
1
mA
W
I
CP
P
C
T
J
150
℃
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
CEO
EBO
-200
-200
-5
Ic= -100uA， I
Ic= -1 mA，I =0
= -100 uA， I =0
CB= -150V , I =0
EB= -4 V , I =0
E=0
V
B
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-0.6
-1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-20mA, I
B
=-2mA
V
C=-20mA, I
B=-2mA
h
FE
V
V
V
V
CE= -5V, I
C
= -10mA
70
240
Reverse transfer capacitance
Collector output capacitance
Transition frequency
C
re
CB= -30V, f=1MHz
CB= -30V, f=1MHz
1.7
2.6
150
pF
C
ob
T
f
CE= -30V, I
C= -10mA
MHz
■ Classification of hfe
Type
KTA1070-O
KTA1070-Y
120-240
Range
70-140
1
www.kexin.com.cn
DIP Type
Transistors
PNP Transistors
KTA1070
■ Typical Characterisitics
2
www.kexin.com.cn
DIP Type
Transistors
PNP Transistors
KTA1070
■ Typical Characterisitics
3
www.kexin.com.cn
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KEC
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