KTA501U [KEXIN]
PNP Transistors;
| 型号： | KTA501U |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：1045K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
KTA501U
SOT-353
Unit: mm
+0.1
-0.1
1.3
0.65
■ Features
● Excellent temperature response between these 2 transistor.
● High pairing property in hFE
● The follwing characteristics are common for Q1, Q2.
.
+0.05
-0.02
+0.1
0.1
0.3
-0.1
5
4
+0.1
-0.1
2.1
1. Q BASE
1
2. Q , Q EMITTER
2
1
3. Q BASE
2
Q1
Q2
4. Q COLLECTOR
2
5. Q COLLECTOR
1
1
2
3
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-50
Unit
V
VCBO
VCEO
VEBO
-50
-5
Collector Current - Continuous
Base Current
I
C
-150
-30
mA
mW
℃
I
B
Collector Power Dissipation
Junction Temperature
P
C
200
150
T
J
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-50
-50
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA， I
Ic= -1 mA， I = 0
= -100μA， I
E= 0
B
I
E
C= 0
I
CBO
EBO
V
V
CB= -50 V , I
EB= -5V , I
E
= 0
-0.1
-0.1
-0.3
-1.2
400
10
uA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-100 mA, I
B
=-10mA
=-10mA
V
C
=-100 mA, I
B
hFE
V
V
V
V
CE= -6V, I
CE=-6V, I
C
= -2mA
=-0.1mA, f=1KHz , Rg=10KΩ
= 0,f=1MHz
= -1mA
120
80
Noise Figure
NF
C
dB
pF
Collector output capacitance
Transition frequency
C
ob
T
CB= -10V, I
CE= -10V, I
E
7
f
C
MHz
■ Classification of hfe
Type
Range
Marking
KTA501U-Y
120-240
SY
KTA501U-G
200-400
SG
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
KTA501U
■ Typical Characterisitics
I C - VCE
hFE - IC
-240
-200
-160
-120
-80
3k
COMMON EMITTER
Ta=25 C
I
=-2.0mA
B
COMMON EMITTER
I
=-1.5mA
B
1k
I
=-1.0mA
B
500
300
V
=-6V
=-1V
Ta=100 C
Ta=25 C
CE
I
=-0.5mA
B
Ta=-25 C
100
I
=-0.2mA
V
CE
B
-40
50
30
-0.1
I
=0mA
B
0
0
-1
-2
-3
-4
-5
-6
-7
-0.3
-1
-3
-10
-30 -100 -300
COLLECTOR-EMITTER VOLTAGE V
(V)
COLLECTOR CURRENT I (mA)
C
CE
VBE(sat) - IC
VCE(sat) - IC
-1
-10
COMMON EMITTER
/I =10
COMMON EMITTER
/I =10
I
I
C
B
B
C
-0.5
-0.3
-5
-3
Ta=25 C
-0.1
-1
-0.05
-0.03
-0.5
-0.3
Ta=25 C
Ta=-25 C
-0.01
-0.1
-0.1
-0.3
-1
-3
-10
-30 -100 -300
-0.1
-0.3
-1
-3
-10
-30 -100 -300
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
IB - VBE
f T - I C
3k
-1k
COMMON EMITTER
COMMON EMITTER
V
=-10V
CE
Ta=25 C
V
=-6V
-300
CE
1k
-100
-30
-10
-3
500
300
100
50
30
-1
10
0.1
-0.3
0.3
1
3
10
30
100
300
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
COLLECTOR CURRENT I (mA)
BASE-EMITTER VOLTAGE V
C
BE
2
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
KTA501U
■ Typical Characterisitics
Pc - Ta
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
3
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