KTC4370A-Y [KEXIN]
NPN Transistors;![KTC4370A-Y](http://pdffile.icpdf.com/pdf2/p00333/img/icpdf/KTC4370A-O_2045848_icpdf.jpg)
型号: | KTC4370A-Y |
厂家: | ![]() |
描述: | NPN Transistors 局域网 晶体管 |
文件: | 总1页 (文件大小:440K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DIP Type
Transistors
NPN Transistors
KTC4370A
Unit: mm
TO-220F
±0.20
±0.20
±0.20
20
.
2.54
8±0
1
±0.20
0.70
φ3.
■ Features
● High Transition Frequency
● Complementary to KTA1659A
±0.20
2.76
1.47max
±0.20
0.50
±0.20
0.80
1. Base
2. Collector
3. Emitter
2.54typ
2.54typ
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Symbol
Rating
180
180
5
Unit
V
VCBO
VCEO
VEBO
I
C
1.5
A
I
B
0.15
20
P
C
W
℃
Collector Power Dissipation
Junction Temperature
Tc = 25℃
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
180
180
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100uA, I
Ic= 10 mA,I
= 100uA, I
CB= 180V , I
EB= 5V , I =0
E
= 0
B=0
I
E
C
= 0
I
CBO
EBO
V
V
E= 0
1
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=500mA, I
B
=50mA
=50mA
1.5
1.2
1
V
C
=500mA, I
B
V
BE
V
V
V
V
CE= 5V, I
CE= 5V, I
C
=500mA
=100mA
DC current gain
hFE
C
70
240
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V,I
E
=0,f=1MHz
25
pF
f
CE= 10V, I
C= 100mA
100
MHz
■ Classification of hfe
Type
KTC4370A-O
KTC4370A-Y
120-240
Range
70-140
1
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