MMBT5401 [KEXIN]
PNP Transistors;
| 型号： | MMBT5401 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors 光电二极管 |
| 文件： | 总2页 (文件大小：1170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
SMD Type
Transistors
PNP Transistors
MMBT5401 (KMBT5401)
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
High Voltage Transistors
Pb-Free Packages are Available
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-160
Unit
V
Collector-emitter voltage
-150
V
Emitter-base voltage
-5
V
Collector current-continuous
Collector Power Dissipation
Junction and storage temperature
-0.6
A
Pc
300
mW
TJ, Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditions
IC = -100 A, IE = 0
Min
-160
-150
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
VCBO
VCEO
VEBO
ICBO
IC =- 1.0 mA, IB = 0
V
V
IE = -10 A, IC = 0
VCB =- 120 V, IE = 0
VEB = -4.0 V, IC = 0
IC = -1.0 mA, VCE = -5 V
IC = -10 mA, VCE = -5 V
IC = -50 mA, VCE = -5 V
-0.1
-0.1
A
Emitter cutoff current
IEBO
A
80
100
50
DC current gain *
hFE
300
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
VCE(sat) IC = -50 mA, IB = -5.0 mA
VBE(sat) IC = -50 mA, IB = -5.0 mA
-0.5
-1.0
V
V
Transiston frequency
fT
VCE=-5V,IC=-10mA,f=30MHz
100
MHz
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.
■ Classification of hfe(2)
Type
Range
Marking
MMBT5401
100-300
MMBT5401-L
100-200
2L
MMBT5401-H
200-300
1
www.kexin.com.cn
SMD Type
SMD Type
Transistors
(KMBT5401)
MMBT5401
Typical Characteristics
hFE —— IC
Static Characteristic
-20
-18
-16
-14
-12
-10
-8
300
250
200
150
100
50
VCE=-5V
-100uA
COMMON
EMITTER
Ta=25℃
Ta=100 o
C
-90uA
-80uA
-70uA
-60uA
Ta=25 o
C
-50uA
-40uA
-6
-30uA
-20uA
-4
-2
IB=-10uA
-0
-0
0
-600
-3
-6
-9
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat —— IC
VBEsat —— IC
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
-1
β=10
β=10
Ta=25℃
Ta=100℃
-0.1
Ta=100℃
Ta=25℃
-0.01
-0.1
-600
-600
-0.1
-1
-10
-100
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
I
V
——
VCB / VEB
Cob / Cib ——
C
BE
-100
-10
-1
100
VCE=-5V
f=1MHz
IE=0 / IC=0
Ta=25 o
C
Cib
Ta=100 o
C
10
Ta=25℃
Cob
-0.1
-0.0
1
-0.5
-0.2
-0.4
-0.6
-0.8
-1.0
-1
-10
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE
VBE(V)
IC
fT ——
Pc —— Ta
300
250
200
150
100
50
0.4
0.3
0.2
0.1
0.0
VCE=-5V
Ta=25 o
C
0
-0
-5
-10
-15
-20
-25
-30
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
COLLECTOR CURRENT IC (mA)
2
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SAMSUNG
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