KVR16LS11K2_V01 [KINGSTON]

8GB (4GB 1Rx8 512M x 64-Bit x 2pcs.) PC3L-12800 CL11 204-Pin SODIMM Kit;


型号：	KVR16LS11K2_V01
厂家：	Kingston
描述：	8GB (4GB 1Rx8 512M x 64-Bit x 2pcs.) PC3L-12800 CL11 204-Pin SODIMM Kit PC
文件：	总2页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Memory Module Speciﬁcations

KVR16LS11K2/16

16GB (8GB 2Rx8 1G x 64-Bit x 2pcs.) PC3L-12800

CL11 204-Pin SODIMM Kit

DESCRIPTION

SPECIFICATIONS

This document describes ValueRAM's kit of two 1G x 64-bit

(8GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8,

low voltage, memory module, based on sixteen 512M x 8-bit

FBGA components. Total kit capacity is 16GB. The SPD is

programmed to JEDEC standard latency DDR3-1600 timing of

11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold

contact fingers. The electrical and mechanical specifications

are as follows:

CL(IDD)

11 cycles

Row Cycle Time (tRCmin)

48.125ns (min.)

260ns (min.)

Refresh to Active/Refresh

Command Time (tRFCmin)

Row Active Time (tRASmin)

Maximum Operating Power

UL Rating

35ns (min.)

TBD W*

94 V - 0

Operating Temperature

Storage Temperature

0^oC to 85^oC

-55^oC to +100^oC

FEATURES

• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V)

Power Supply

*Power will vary depending on the SDRAM.

• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

• 800MHz fCK for 1600Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5

• 8-bit pre-fetch

• Bi-directional Differential Data Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin

(RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at

85°C < TCASE < 95°C

• Asynchronous Reset

• PCB: Height1.18” (30mm), double sided component

• RoHS Compliant

Continued >>

Document No. VALUERAM1571-001.B00 01/23/17 Page 1

MODULE DIMENSIONS:

Document No. VALUERAM1571-001.B00 Page 2

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