ML-1CL3 [KODENSHI]
Infrared Emitting Diodes(GaAlAs); 红外发射二极管（ GaAlAs的）
| 型号： | ML-1CL3 |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | Infrared Emitting Diodes(GaAlAs) |
| 文件： | 总2页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
M L - 1 C L 3
DIMENSIONS
(Unit : mm)
The ML- 1CL3 is a high- power GaAlAs IRED mounted
in a 3ø ceramic package.
FEATURES
• ø 3 ceramic base
• Peak emission wavelength λp = 8 6 5 n m
• Wide beam angle ± 5 3 d e g .
APPLICATIONS
• Optical switches
• E n c o d e r s
• O A
MAXIMUM RATINGS
( T a = ℃2)5
I t e m
S y m b o Rl a t i n g U n i t
R
Reverse voltage
Forward current
Power dissipation
V
3
V
m A
m W
A
F
I
5 0
8 0
0 . 5
D
P
Pulse forward current *
Operating temp.
Storage temp.
1
F
I
P
T o p r .
T s t g .
T s o l .
2 0
2 0
2 4 0
7 0
℃
8 0
℃
*
2
Soldering temp.
℃
*1. pulse width tw 100 μsec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
( T a = ℃2 )5
I t e m
Forward voltage
Reverse current
S y m b o l
F
V
R
I
λ p
Δ λ
C o n d i t i o n s
M i n . T y p .
1 . 4
M a x .
U n i t .
F
I = 5 0 m A
1 . 7
1 0
V
μA
n m
n m
m V
R
V = 3 V
F
I = 2 0 m A
I = 2 0 m A
I = 2 0 m A
8 6 5
3 0
Peak emission wavelength
Spectral bandwidth
F
3
Radiant intensity *
F
O
5 0
P
± 5 3
d e g .
Half angle
Δ θ
*3. Measured by tester of KODENSHI CORP.
- 1-
Infrared Emitting Diodes(GaAlAs)
M L - 1 C L 3
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current Vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
- 2-
相关型号：
©2020 ICPDF网 联系我们和版权申明