OPA7714WDD [KODENSHI]
Infrared LED Chip; 红外LED芯片
| 型号： | OPA7714WDD |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | Infrared LED Chip |
| 文件： | 总1页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared LED Chip
OPA7714WDD
AlGaAs / GaAs
Substrate
GaAs (N Type)
1. Material
Epitaxial Layer AlGaAs(P/N Type)
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
2. Electrode
Parameter Symbol Min
Typ
Max
Unit Condition
3. Electro-Optical
Characteristics
VF
VR
PO
λP
Forward Voltage
Reverse Current
Power
2.0
V
V
IF=50mA
IR=10uA
IF=50mA
8
8
mW
770
30
nm
nm
IF=50mA
IF=50mA
Wavelength
∆λ
※ Note : Power is measured by Sorter E/T system with bare chip.
(a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
-------------------- 13.0mil x 13.0mil
-------------------- 14.0mil x 14.0mil
-------------------- 120um
4. Mechanical Data
-------------------- 7.8mil
(d)
(b)
(c)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr
相关型号：
©2020 ICPDF网 联系我们和版权申明