OPA8512HPR [KODENSHI]
Infrared LED Chip; 红外LED芯片
| 型号： | OPA8512HPR |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | Infrared LED Chip |
| 文件： | 总1页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared LED Chip
OPA8510HPR
High Speed
Substrate
GaAlAs/GaAlAs
GaAlAs (N Type) Removed
1. Material
Epitaxial Layer GaAlAs (P/N Type)
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
2. Electrode
Parameter Symbol Min
Typ
Max
Unit
V
Condition
IF=10uA
3. Electro-Optical
Characteristics
VF1
Forward Voltage
VF2
1.1
1.4
1.6
V
IF=150mA
IR=10uA
VR
PO
λP
Reverse Voltage
Power
5
V
18
21
mW
nm
IF=150mA
850
IF=50mA
IF=50mA
Wavelength
∆λ
Tr
Tf
45
11.5
6.6
nm
ns
ns
Rise Time
Fall Time
※ Note : LED chip is mounted on TO-18 gold header without resin coating.
(a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------- 38.4mil x 38.4mil
--------------------- 39.4mil x 39.4mil
--------------------- 100um
4. Mechanical Data
---------------------
---------------------
7mil
6.3mil
(d)
(e)
P Side Electrode
N Side Electrode
513-37 Eoyang-dong, Iksan, 570-210, Korea
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