OPA8950HN [KODENSHI]
Infrared LED Chip; 红外LED芯片
| 型号： | OPA8950HN |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | Infrared LED Chip |
| 文件： | 总1页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared LED Chip
OPA8950HN
High Speed / N Side-Up
GaAlAs/GaAlAs
Substrate
GaAlAs (P Type) Removed
1. Material
Epitaxial Layer GaAlAs (N/P Type)
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
2. Electrode
Parameter Symbol Min
Typ
Max
Unit
V
Condition
IF=10uA
IF=50mA
IR=10uA
IF=50mA
IF=50mA
3. Electro-Optical
Characteristics
VF(1)
Forward Voltage
VF(2)
1.1
1.6
V
VR
PO
Reverse Voltage
Power
4
V
6.5
mW
λP
∆λ
Tr
888
45
nm
nm
ns
Wavelength
IF=50mA
Tp=400ns,
Duty=50%,
IFP=50mA
Rise Time
Fall Time
25
Tf
20
ns
※ Note : LED chip is mounted on TO-18 gold header without resin coating.
(a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------- 18.7mil x 18.7mil
--------------------- 19.7mil x 19.7mil
--------------------- double pad
4. Mechanical Data
---------------------
---------------------
7mil
4.6mil
(b)
(d)
(e)
(a)
N Side Electrode
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr
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