SMK0780FD [KODENSHI]
SWITCHING REGULATOR APPLICATION; 开关稳压器的应用
| 型号： | SMK0780FD |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | SWITCHING REGULATOR APPLICATION |
| 文件： | 总8页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMK0780FD
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
High voltage: BVDDS=800V
Low gate charge: Qg=40nC (Typ.)
Low drain-source On resistance: RDS(on)=1.6Ω (Max.)
100% avalanche tested
RoHS compliant device and available in halogen free device
Ordering Information
G D S
Part Number
SMK0780FD
Marking
Package
TO-220F-3L
SMN0780
TO-220F-3L
Marking Information
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GFYMDD
-. G : Option Code (H : Halogen Free)
-. F : Factory Management Code
-. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
AUK
GFYMDD
SMK0780
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Rating
Unit
V
Drain-source voltage
VDSS
800
30
7
Gate-source voltage
Drain current (DC) *
VGSS
V
A
Tc=25C
ID
4.4
28
A
Tc=100C
Drain current (Pulsed) *
IDM
IAS
A
Avalanche current (Note 2)
7
A
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
EAS
IAR
522
7
mJ
A
EAR
PD
4.5
45
mJ
W
C
C
Junction temperature
TJ
150
-55~150
Storage temperature range
Tstg
* Limited only maximum junction temperature
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
1 of 8
SMK0780FD
Thermal Characteristics
Characteristic
Symbol
Rth(j-c)
Rating
Unit
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Max. 2.77
Max. 62.5
C/W
Rth(j-a)
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Test Condition
Min.
Typ. Max.
Unit
ID=250uA, VGS=0
800
-
-
-
V
V
ID=250uA, VDS=VGS
VDS=800V, VGS=0V
VDS=0V, VGS=30V
VGS=10V, ID=3.5A
VDS=10V, ID=3.5A
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
-
1
uA
nA
-
100
Drain-source on-resistance
Forward transfer conductance (Note 3)
Input capacitance
1.28
5.6
1650
135
15
40
110
65
70
40
12
15
1.6
-
-
-
-
-
-
-
-
-
-
-
S
Ciss
VDS=25V, VGS=0V,
f=1.0MHz
Output capacitance
Coss
Crss
td(on)
tr
pF
ns
Reverse transfer capacitance
Turn-on delay time (Note 3,4)
Rise time (Note 3,4)
VDD=400V, ID=7A,
RG=25ꢀ
Turn-off delay time (Note 3,4)
Fall time (Note 3,4)
td(off)
tf
Total gate charge (Note 3,4)
Gate-source charge (Note 3,4)
Gate-drain charge (Note 3,4)
Qg
VDS=640V, VGS=10V,
ID=7A
Qgs
nC
Qgd
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ. Max.
Unit
A
Source current (DC)
IS
ISM
VSD
trr
-
-
-
-
-
-
7
28
1.4
-
Integral reverse diode
in the MOSFET
Source current (Pulsed)
Forward voltage
-
-
A
VGS=0V, IS=7A
V
Reverse recovery time (Note 3,4)
Reverse recovery charge (Note 3,4)
Note:
560
4
ns
uC
IS=7A, VGS=0V
dIF/dt=100A/us
Qrr
-
1. Repeated rating: Pulse width limited by safe operating area
2. L=20mH, IAS=7A, VDD=50V, RG=25, Starting TJ=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
2 of 8
SMK0780FD
Electrical Characteristics Curves
Fig. 1 ID - VDS
Fig. 2 ID – VGS
50
Top
9.5 V
9.0 V
8.5 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
10
45
40
35
30
25
20
15
150℃
1
0.1
※Note:
1.250㎲ Pulse Test
2.TC =25°C
-25℃
Bottom 5.0 V
25℃
0.01
10
5
※Note:
1.VDS 10V
=
2.250㎲ Pulse Test
0
0.001
0
10
20
30
40
50
0
4
6
8
10
2
Drain-Source Voltage, VDS[V]
Gate-Source Voltage, VGS[V]
Fig. 3 RDS(ON) - ID
Fig. 4 IS - VSD
`
10
3
※Note:
TJ =25
2.5
150℃
1
2
1.5
1
VGS=20V
25℃
VGS=10V
0.1
0.5
※Note:
1.VGS =0V
2.250㎲ Pulse Test
0
0.01
0
2
4
6
8
10
12
14
16
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain-Current, I [A]
D
Source - Drain Forward Voltage, VSD[V]
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
14
3000
※Note:
※Note:
1.ID =7A
2.vDS =640V
1.VGS 0V
2.f=1MHz
=
12
2500
2000
Ciss
10
8
1500
6
Coss
1000
500
4
2
0
Crss
0
0.1
1
10
0
5
10
15
20
25
30
35
40
Drain-Source Voltage, VDS[V]
Total Gate Charge, Qg[nC]
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
3 of 8
SMK0780FD
Fig. 7 BVDSS - TJ
Fig. 8 RDS(ON) - TJ
3
1.15
2.5
2
1.10
1.05
1.00
1.5
1
0.95
※Note:
1.vGS =0V
2.ID =3.5A
0.5
※Note:
1.vGS 0V
=
2.ID =250μs
0.90
-50
0
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Junction Temperature, T [℃]
J
Junction Temperature, T [℃]
J
Fig. 9 Safe Operating Area
Fig. 10 ID - TC
8
102
101
100
10-1
10-2
Operation in This Area
is Limited by RDS(on)
10μs
100μs
1ms
10ms
6
DC
4
2
※Note:
1.T
C
=25
2.T
J
=150
3.Single Pulse
0
100
0
101
102
25
75
100
125
150
50
V
DS , Drain-Source Voltage [V]
Case Temperature, T
C
[°C
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
4 of 8
SMK0780FD
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
5 of 8
SMK0780FD
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
6 of 8
SMK0780FD
Package Outline Dimensions
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
7 of 8
SMK0780FD
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
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