STD123UF [KODENSHI]
SMALL SIGNAL TRANSISTOR;
| 型号： | STD123UF |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | SMALL SIGNAL TRANSISTOR |
| 文件： | 总3页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD123UF
Semiconductor
NPN Silicon Transistor
Features
• Low saturation medium current application
• Extremely low collector saturation voltage
• Suitable for low voltage large current drivers
• High DC current gain and large current capability
• Low on resistance : RON=0.6Ω(Max.) (IB=1mA)
Ordering Information
Type NO.
Marking
Package Code
SOT-323F
STD123UF
123
Outline Dimensions
unit : mm
2.1±0.1
1.30±0.1
1
2
3
PIN Connections
1. Base
2. Emitter
3. Collector
KST-3064-000
1
STD123UF
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
(Ta=25°C)
Unit
V
Symbol
VCBO
VCEO
VEBO
IC
Ratings
20
15
V
6.5
V
1
A
Collector dissipation
Junction temperature
Storage temperature
PC
200
mW
°C
°C
Tj
150
Tstg
-55~150
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
IC=50µA, IE=0
20
15
6.5
-
-
-
V
IC=1mA, IB=0
-
-
V
IE=50µA, IC=0
-
-
V
VCB=20V, IE=0
-
0.1
0.1
-
µA
µA
-
Emitter cut-off current
IEBO
VEB=6V, IC=0
-
-
DC current gain
hFE
VCE=1V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=50mA
VCB=10V, IE=0, f=1MHz
f=1KHz, IB=1mA, VIN=0.3V
150
-
-
Collector-Emitter saturation voltage
Transistor frequency
VCE(sat)
fT
0.1
260
5
0.3
-
V
-
MHz
pF
Ω
Collector output capacitance
On resistance
Cob
-
-
RON
-
0.6
-
KST-3064-000
2
STD123UF
Electrical Characteristic Curves
Fig. 2 VCE(sat)-IC
Fig. 1 PC - Ta
Fig. 2 COb-VCB
Fig. 4hFE-IC
Fig. 5 RON-IB
KST-3064-000
3
相关型号：
©2020 ICPDF网 联系我们和版权申明