STD12N05L [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR; N - 沟道增强模式低阈值功率MOS晶体管
| 型号： | STD12N05L |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
| 文件： | 总10页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD12N05L
STD12N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
STD12N05L
STD12N06L
VDSS
50 V
60 V
RDS(on)
< 0.15 Ω
< 0.15 Ω
ID
12 A
12 A
■
■
■
■
■
■
■
■
TYPICAL RDS(on) = 0.115 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
3
REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
3
2
1
1
LOGIC LEVEL COMPATIBLE INPUT
175oC OPERATING TEMPERATURE
APPLICATION ORIENTED
IPAK
TO-251
DPAK
TO-252
CHARACTERIZATION
■
■
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
(Suffix ”-1”)
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STD12N05L
STD12N06L
VDS
VDG R
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
50
50
60
60
V
V
± 15
12
V
A
ID
8
A
IDM(•)
Ptot
48
A
Total Dissipation at Tc = 25 oC
45
W
Derating Factor
0.3
W/oC
oC
oC
Tstg
Tj
Storage Temperature
-65 to 175
175
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/10
November 1996
STD12N05L/STD12N06L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Max
Typ
3.33
100
1.5
oC/W
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
275
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
12
A
(pulse width limited by Tj max, δ < 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
30
7
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
8
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Parameter
Test Conditions
ID = 250 µA VGS = 0
Min.
Typ.
Max.
Unit
for STD12N05L
for STD12N06L
50
60
V
V
IDSS
IGSS
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 C
VDS = Max Rating
1
10
µA
µA
o
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
± 100
nA
ON ( )
Symbol
Parameter
Test Conditions
Min.
Typ.
1.6
Max.
2.5
Unit
V
VGS(th)
Gate Threshold Voltage VDS = VGS ID = 250 µA
1
RDS(on) Static Drain-source On VGS = 5 V ID = 6 A
Resistance
0.115
0.15
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
12
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max
ID = 6 A
4
8
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
350
150
50
500
200
80
pF
pF
pF
2/10
STD12N05L/STD12N06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 25 V ID = 6 A
RG = 50 Ω VGS = 5 V
(see test circuit, figure 3)
(di/dt)on Turn-on Current Slope VDD = 40 V ID = 12 A
RG = 50 Ω VGS = 5 V
Min.
Typ.
Max.
Unit
td(on)
tr
55
180
80
260
ns
ns
120
A/µs
(see test circuit, figure 5)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 40 V ID = 12 A VGS = 5 V
12
6
5
18
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 40 V ID = 12 A
RG = 50 Ω VGS = 5 V
(see test circuit, figure 5)
40
60
110
60
90
160
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
12
48
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 12 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 12 A
VDD = 25 V
(see test circuit, figure 5)
di/dt = 100 A/µs
75
0.15
4
ns
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas
Thermal Impedance
3/10
STD12N05L/STD12N06L
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/10
STD12N05L/STD12N06L
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
STD12N05L/STD12N06L
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
6/10
STD12N05L/STD12N06L
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge Test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
7/10
STD12N05L/STD12N06L
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
2.2
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
8/10
STD12N05L/STD12N06L
TO-252 (DPAK) MECHANICAL DATA
mm
inch
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
TYP.
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL ”A”
D
L2
DETAIL ”A”
L4
0068772-B
9/10
STD12N05L/STD12N06L
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in lifesupport devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France- Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
10/10
相关型号：
STD12N65M5
N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明