ML145146RP [LANSDALE]

4-Bit Data Bus Input PLL Frequency Synthesizer; 4位数据总线输入锁相环频率合成器
ML145146RP
型号: ML145146RP
厂家: LANSDALE SEMICONDUCTOR INC.    LANSDALE SEMICONDUCTOR INC.
描述:

4-Bit Data Bus Input PLL Frequency Synthesizer
4位数据总线输入锁相环频率合成器

光电二极管 输入元件
文件: 总12页 (文件大小:3648K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ML145146  
4–Bit Data Bus Input PLL  
Frequency Synthesizer  
INTERFACES WITH DUAL–MODULUS PRESCALERS  
Legacy Device: Motorola MC145146-2  
The ML145146 is programmed by a 4–bit input, with  
strobe and address lines. The device features consist of a  
reference oscillator, 12–bit programmable reference  
divider, digital phase detector, 10–bit programmable  
divide–by–N counter, 7–bit divide–by–A counter, and the  
necessary latch circuitry for accepting the 4–bit input data.  
P DIP 20 = RP  
PLASTIC DIP  
CASE 738  
20  
1
SOG 20 W = -6P  
SOG PACKAGE  
CASE 751D  
20  
• Operating Temperature Range: T – 40 to +85°C  
A
• Low Power Consumption Through the Use of  
CMOS Technology  
• 3.0 to 9.0 V Supply Range  
• Programmable Reference Divider for Values Between  
3 and 4095  
• Dual–Modulus 4–Bit Data Bus Programming  
• ÷ N Range = 3 to 1023, ÷ A Range= 0 to 127  
• “Linearized” Digital Phase Detector Enhances  
Transfer Function Linearity  
1
CROSS REFERENCE/ORDERING INFORMATION  
PACKAGE  
MOTOROLA  
LANSDALE  
P DIP 20  
SOG 20W  
MC145146P2  
ML145146RP  
MC145146DW2 ML145146-6P  
Note: Lansdale lead free (Pb) product, as it  
becomes available, will be identified by a part  
number prefix change from ML to MLE.  
Two Error Signal Options:  
PIN ASSIGNMENT  
Single–Ended (Three–State)  
Double–Ended  
D1  
D0  
1
2
20  
19  
D2  
D3  
f
3
4
18  
17  
f
R
in  
V
φ
R
SS  
BLOCK DIAGRAM  
PD  
V
5
6
16  
15  
φ
V
out  
f
DD  
V
f
12–BIT  
L5  
÷R COUNTER  
OSC  
in  
R
OSC  
in  
7
14  
13  
12  
11  
MC  
LD  
ST  
A2  
OSC  
out  
OSC  
8
out  
L6  
L7  
LOCK  
DETECT  
LD  
PD  
A0  
9
D0  
D1  
D2  
D3  
A2  
A1  
A0  
A1  
10  
PHASE  
DETECTOR A  
out  
LATCH  
CONTROL  
CIRCUITRY  
LATCHES  
f
V
ST  
φ
V
PHASE  
L2  
L3  
L4  
L0  
L1  
DETECTOR B  
φ
R
f
in  
10–BIT  
÷
N COUNTER  
7–BIT  
÷
A COUNTER  
MODULUS CONTROL (MC)  
CONTROL LOGIC  
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PIN DESCRIPTIONS  
LD  
Lock Detector (Pin 13)  
INPUT PINS  
D0 - D3  
High level when loop is locked (f , f of same phase and  
R V  
frequency). Pulses low when loop is out of lock.  
Data Inputs (Pins 2, 1, 20, 19)  
MC  
Information at these inputs is transferred to the internal  
latches when the ST input is in the high state. D3 (Pin 19) is  
the most significant bit.  
Modulus Control (Pin 14)  
Signal generated by the on–chip control logic circuitry for  
controlling an external dual–modulus prescaler. The modulus  
control level is low at beginning of a count cycle and remains  
low until the ÷A counter has counted down from its pro-  
grammed value. At this time, modulus control goes high and  
remains high until the ÷N counter has counted the rest of the  
way down from its programmed value (N – A additional count-  
er since both ÷N and ÷A are counting down during the first  
portion of the cycle). Modulus control is then set back low, the  
counters preset to their respective programmed values, and the  
above sequence repeated. This provides for a total programma-  
f
in  
Frequency Input (Pin 3)  
Input to ÷N portion of synthesizer f is typically derived  
in  
from loop VCO and is AC coupled into Pin 3. For larger  
amplitude signals (standard CMOS – logic levels) DC coupling  
may be used.  
OSC /OSC  
in  
out  
Reference Oscillator Input/Output (Pins 7 and 8)  
ble divide value (N ) = N • P ÷ A where P and P ÷ 1 represent  
T
These pins form an on–chip reference oscillator when con-  
nected to terminals of an external parallel resonant crystal.  
Frequency setting capacitors of appropriate value must be con-  
the dual–modulus prescaler divide values respectively for high  
and low modulus control levels. N the number programmed  
into the ÷N counter and A the number programmed into the  
÷A counter.  
nected from OSC to ground and OSC  
in  
to ground. OSC  
in  
out  
may also serve as input for an externally–generated reference  
f
V
signal. This signal is typically AC coupled to OSC , but for  
in  
÷N Counter Output (Pin 15)  
larger amplitude signals (standard CMOS–logic levels) DC  
coupling may also be used. In the external reference mode, no  
This pin is the output of the ÷N counter that is internallly  
connected to the phase detector input. With this output avail-  
able, the ÷N counter can be used independently.  
connection is required to OSC  
.
out  
A0 - A2  
Address Inputs (Pins 9, 10, 11)  
φ , φ  
V R  
Phase Detector Outpiuts (Pins 16 adn 17)  
A0, A1 and A2 are used to define which latch receives the  
information on the data input lines. The addresses refer to the  
following latches.  
These phase detector outputs can be combined externally for  
a loop error signal. A single–ended output is also available for  
this purpose (see PD ).  
out  
If frequency f is greater than f or if the phase of f is  
V
R
V
A2 A1 A0 Selected  
Function  
÷ A Bits  
D0 D1 D2 D3  
leading, then error information is provided by φ pulsing low  
V
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Latch 0  
Latch 1  
Latch 2  
Latch 3  
Latch 4  
Latch 5  
Latch 6  
Latch 7  
0
4
0
4
8
0
4
8
1
5
1
5
9
1
5
9
2
6
3
3
φ remains essentially high.  
R
÷ A Bits  
If the frequency f is less than f or if the phase of f is  
V
R
V
÷ N Bits  
2
lagging, then error information is provided by φ pulsing low  
R
φ remains essentially high.  
÷ N Bits  
5
7
V
If the frequency of f = f and both are in phase, then both  
V
R
÷ N Bits  
2
3
φ and φ remain high except for a small minimum time peri-  
V
R
Reference Bits  
Reference Bits  
Reference Bits  
od when both pulse low in phase.  
6
7
f
10 11  
R
÷R Counter Output (Pin 18)  
ST  
Strobe Transfer (Pin 12)  
This is the output of the ÷ R counter that is internally con-  
nected to the phase detector input. With this output available,  
the ÷ R counter can be used independently.  
The rising edge of strobe transfers data into the addressed  
latch. The falling edge of strobe latches data into the latch.  
This pin should normally be held low to avoid loading latches  
with invalid data.  
POWER SUPPLY PINS  
V
SS  
OUTPUT PINS  
Ground (Pin 4)  
Circuit Ground  
PDout  
Single–ended Phase Detector Output (Pin 5)  
V
DD  
Positive Power Supply (Pin 6)  
Three–state output of phase detector for use as loop error  
signal.  
The positive supply voltage may range from 3.0 to 9.0 V  
with respect to V .  
SS  
Frequency f >f or f Leading: Negative Pulses  
V R  
V
V
Frequency f <f or f Lagging: Negative Pulses  
V R  
Frequency f =f and Phase Coincidence: High–Impedance  
V R  
State  
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DESIGN CONSIDERATIONS  
The oscillator can be “trimmed” on–frequency by making a  
portion or all of C1 variable. The crystal and associated com-  
CRYSTAL OSCILLATOR CONSIDERATIONS  
ponents must be located as close as possible to the OSC and  
in  
OSC  
pins to minimize distortion, stray capacitance, stray  
The following options may be considered to provide a refer-  
ence frequency to Motorolas CMOS frequency synthesizers.  
The most desirable is discussed first.  
out  
inductance, and startup stabilization time. In some cases, stray  
capacitance should be added to the value for C and C  
.
in out  
Power is dissipated in the effective series resistance of the  
Use of a Hybrid Crystal Oscillator  
crystal, R . In Figure 10 The drive level specified by the crys-  
e
Commercially available temperature–compensated crystal  
oscillators (TCXOs) or crystal–controlled data clock oscilla-  
tors provide very stable reference frequencies. An oscillator  
capable of sinking and sourcing 50 µA at CMOS logic levels  
tal manufacturer is the maximum stress that a crystal can with-  
stand without damaging or excessive shift in frequency. R1 in  
Figure 8 limits the drive level. The use of R1 may not be nec-  
essary in some cases (i.e. R1 = 0 ohms).  
may be direct or DC coupled to OSC . In general, the highest  
To verify that the maximum DC supply voltage does not  
overdrive the crystal, monitor the output frequency as a func-  
in  
frequency capability is obtained utilizing a direct coupled  
square wave having a rail–to–rail (V  
swing. If the oscillator does not have CMOS logic levels on the  
to V ) voltage  
tion of voltage at OSC . (care should be taken to minimize  
DD  
SS  
out  
loading.) the frequency should increase very slightly as the dc  
supply voltage is increased. An overdriven crystal will decrease  
in frequency or become unstable with an increase in supply  
voltage. The operating supply voltage must be reduced or R1  
must be increased in value if the overdrive condition exists.  
The user should note that the oscillator start–up time is propor-  
tional to the value of R1.  
outputs, capacitive or AC coupling of OSC may be used.  
in  
OSC , an unbuffered output, should be left floating.  
out  
For additional information about TCXOs and data clock  
oscillators, please consult the latest version of the eem  
Electronic Engineers Master Catalog, the Gold Book, or simi-  
lar publications.  
Through the process of supplying crystals for use with  
CMOS inverters, many crystal manufacturers have developed  
expertise in CMOS oscillator design with crystals. Discussions  
with such manufacturers can prove very helpful. See Table 1.  
Design an Off–Chip Reference  
The user may design and off–chip crystal oscillator using  
ICs specifically developed for crystal oscillator applications,  
such as the ML12061 MECL device. The reference signal from  
the MECL device is AC coupled to OSC . For large ampli-  
in  
tude signals (standard CMOS logic levels), DC coupling is  
used. OSC , an unbuffered output, should be left floating. In  
out  
general, the highest frequency capability is obtained with a  
direct–coupled square wave having rail–to–rail voltage swing.  
Use of the On–Chip Oscillator Circuitry  
The on–chip amplifier (a digital inverter) along with an  
appropriate crystal may be used to provide a reference source  
frequency. A fundamental mode crystal, parallel resonant at the  
desired operating frequency, should be connected as shown in  
Figure 8.  
For V  
= 5.0 V, the crystal should be specified for a load-  
DD  
ing capacitance. C , which does not exceed 32 pF for frequen-  
L
cies to approximately 8.0 MHz, 20 pF for frequencies in the  
area of 8.0 to 15 MHz, and 10 pF for higher frequencies. These  
are guidelines that provide a reasonable compromise between  
IC capacitance, drive capability, swamping variations stray in  
IC input/output capacitance, and realistic C values. The shunt  
L
load capacitance, C , presented across the crystal can be esti-  
mated to be:  
L
where  
C
C
= 5.0pF (See Figure 9)  
in  
= 6.0pF (See Figure 9)  
out  
C = 1.0pF (See Figure 9)  
C = the crystals holder capacitance (See Figure 10)  
C1 and C2 = external capacitors (See Figure 8)  
a
O
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RECOMMENDED READING  
Technical Note TN–24 Statek Corp.  
Technical Note TN–7 Statek Corp.  
N is the number programmed into the ÷N counter, A is the  
number programmed into the ÷A counter, P and P ÷ 1 are the  
two selectable divide ratios available in the dual–modulus  
E. Hafner, “The Piezoelectric Crystal Unit – Definitions and  
Method of Measurement”, Proc. iEEE, Vol 57, No 2 Feb, 1969  
D. Kemper, L. Rosine, “Quartz Crystals for Frequency  
Control”, Electro–Tecchnology, June 1969  
P.J. Ottowitz, “AGuide to Crystal Selection”, Electronic  
Design, May 1966  
prescalers. To have a range of N values in sequence, the ÷A  
T
counter is programmed from zero through P ÷ 1 for a particu-  
lar value N in the ÷N counter. N is then incremented to the N  
÷ 1, and the ÷A is sequenced from 0 through P ÷ 1 again.  
There are minimum and maximum values that can be  
achieved for N . These values are a function of P and the size  
DUAL–MODULUS PRESCALING  
T
of the ÷N and ÷A counters. The constraint N A always  
The technique of dual–modulus prescaling is well estab-  
lished as a method of acheiving high performance frequency  
synthesizer operation at high frequencies. Basically, the  
approach allows relatively low–frequency programmable coun-  
ters to be used as high–frequency programmable counters with  
speed capability of several hundred MHz. This is possible  
without the sacrifice in system resolution and performance that  
results if a fixed (single–modulus) divider is used for the  
prescaler.  
In dual–modulus prescaling, the lower speed counters must  
be uniquely configured. Special control logic is necessary to  
select the divide value P or P ÷ 1 in the prescaler for the  
required amount of time (see modullus control definition).  
Lansdales dual–modulus frequency synthesizers contain this  
feature and can be used with a variety of dual–modulus  
prescalers to allow speed, complexity and cost to be tailored to  
the system requirements. Prescalers having P, P ÷ 1 divide val-  
ues in the range of ÷3/÷4 to ÷128/÷129 can be controlled by  
most Lansdale frequency synthesizers.  
applies. If A  
= P – 1, then N  
P – 1. Then NTmin =  
max  
min  
(P – 1) P + A or (P – 1)P since A is free to assume the value of 0.  
÷ N • P + A  
N
Tmax  
max max  
To maximize system frequency capability, the dual–modulus  
prescaler output must go from low to high after each group of  
P or P – 1 input cycles. The prescaler should divide by P when  
its modulus control line is high and by P – 1 when the modulus  
control is low.  
For the maximum frequency into the prescaler (f  
max),  
VCO  
the value used for P must be large enough such that:  
1. f max divided by P may not exceed the frequency  
VCO  
capability of f (input to the ÷N and ÷A counters).  
in  
2. The period of f  
divided by P must be greater than the  
VCO  
sum of the times:  
a. Propagation delay through the dual modulus  
prescaler.  
b. Prescaler setup or release time relative to its modulus  
control signal.  
c. Propagation time from f to the modulus control  
in  
Several dual–modulus prescaler approaches suitable for use  
with the ML145146 are:  
output for the frequency synthesizer device.  
A sometimes useful simplification in the programming code  
can be achieved by choosing the values for P of 8, 16, 32, or  
64. For these cases, the desired value of N results when N  
T
T
ML12009  
ML12011  
ML12013  
ML12015  
ML12016  
ML12017  
ML12018  
ML12032  
÷5/÷6  
÷8/÷9  
÷10/÷11  
÷32/÷33  
÷40/÷41  
440 MHz  
500 MHz  
500 MHz  
225 MHz  
225 MHz  
225 MHz  
520 MHz  
1.1 GHz  
in binary is used as the program code to the ÷N and ÷A coun-  
ters treated in the following manner:  
a
1. Assume the ÷A counter contains “a” bits where 2 P.  
2. Always program all higher order ÷A counter bits  
above “a” to 0  
÷64/÷65  
÷128/÷129  
÷64/65 or ÷128/129  
3. Assume the ÷N counter and the ÷A counter (with all  
the higher order bits above “a” ignored) combined  
into a single binary counter of n + a bits in length (n =  
number of divider stages in the ÷N counter). The  
MSB of this “hypothetical” counter is to correspond to  
the MSB of ÷N and the LSB is to correspond to the  
DESIGN GUIDELINES  
The system total divide value. N  
by the application. i.e.,  
(N ) will be dictated  
T
total  
LSB of ÷A. The system divide value, N , now results  
T
when the value of N in binary is used to program  
the “new” n + a bit counter.  
T
By using the two devices, several dual–modulus values are  
achievable (shown in Figure 11).  
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APPLICATION  
MC  
The features of the ML145146 permit bus operation with a  
dedicated wire needed only for the strobe input. In a micro-  
processor–controlled system this strobe input is accessed  
when the phase lock loop is addressed. The remaining data  
and address inputs will directly interface to the microproces-  
sors data and address buses.  
The device architecture allows the user to establish any  
integer reference divide value between 3 and 4095. The wide  
selection of ÷R values permits a high degree of flexibility in  
choosing the reference oscillator frequency. As a result the  
reference oscillator can frequently be chosen to serve multi-  
ple system functions such as a second local oscillator in a  
receiver design or a microprocessor system clock. Typical  
applications that take advantage of these ML145146 features  
including the dual modulus capability are shown in Figures  
12, 13 and 14.  
DEVICE A  
DEVICE  
DEVICE B  
B
ML12009  
÷20/÷21  
ML12011  
÷32/÷33  
ML12013  
÷40/÷41  
DEVICE A  
MC10131  
MC10138  
MC10154  
÷50/÷51  
÷80/÷81  
÷100/÷101  
÷80/÷81  
÷40/÷41  
OR  
÷64/÷65  
OR  
÷128/÷129  
÷80/÷81  
NOTE: ML12009, ML12011 and ML12013 are pin equivalent.  
ML12015, ML12016 and ML12017 are pin equivalent.  
Figure 11. Dual Modulus Values  
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CHOICE OF  
REF. OSC.  
FREQUENCY  
(ON–CHIP OSC.  
OPTIONAL)  
FOR USE WITH EXTERNAL  
PHASE DETECTOR (OPTIONAL)  
}
LOCK DETECT  
SIGNAL  
RECEIVER LO.  
443.325  
(25 kHz STEPS)  
443.950 MHz  
8
18  
15  
13  
LD  
f
f
OSC  
R
V
out  
5
PD  
7
6
4
out  
TRANSMITTER  
OSC  
in  
LOOP  
MODULATION  
AND 15.7 MHz  
OFFSET  
17  
16  
φ
R
VCO  
FILTER  
TRANSMITTER SIGNAL  
459.025 – 459.650 MHz  
(25 kHz STEPS)  
ML145146  
}
φ
V
V
CHOICE OF DETECTOR  
ERROR SIGNALS  
DD  
MOD  
CONTROL  
14  
3
V
SS  
D3 D2 D1 D0 A2 A1 A0  
f
in  
ST  
19  
20  
1
2
11  
10  
9
12  
ML12034 PRESCALER  
CHIP  
SELECT TO  
TO SHARED CONTROLLER BUS  
CONTROLLER  
NOTES:  
1. Reciever I.F = 10.7 MHz, low side injection.  
2. Duplex operation with 5 MHz receive/transmit separation.  
3. f = 25 kHz, + R chosen to correspond with desired reference oscillator frequency.  
R
4. N  
= 17,733 to 17,758 = N • P + A; N = 227, A = 5 to 30 for P = 64.  
total  
Figure 13. Synthesizer for UHF Mobil Radio Telephone Channels Demonstrates Use of the ML145146 in  
Microprocessor/Microcomputer Controlled Systems Operating to Several Hundred MHz  
RECEIVER  
2ND, L.O.  
33,300 MHZ  
CHOICE OF  
REF. OSC.  
FREQUENCY  
(ON–CHIP OSC.  
OPTIONAL)  
FOR USE WITH EXTERNAL  
PHASE DETECTOR (OPTIONAL)  
}
X3  
LOCK DETECT  
SIGNAL  
RECEIVER FIRST L.O.  
825.030 844.980 MHZ  
(30 KHz STEPS)  
5
LD  
8
f
f
V
OSC  
R
out  
PD  
7
6
4
out  
OSC  
in  
LOOP  
FILTER  
17  
16  
14  
3
φ
X4  
R
VCO  
ML145146  
}
TRANSMITTER  
MODULATION  
φ
V
V
X4  
DD  
CHOICE OF DETECTOR  
ERROR SIGNALS  
MOD  
CONTROL  
V
TRANSMITTER SIGNAL  
825.030 844.880 MHz  
(30 kHz STEPS)  
SS  
D3 D2 D1 D0 A2 A1 A0  
f
in  
ST  
19  
20  
1
2
11  
10  
9
12  
MC10131  
DUAL F/F  
ML12011  
÷8/÷9 PRESCALER  
CHIP  
SELECT TO  
CONTROLLER  
TO SHARED CONTROLLER BUS  
+32/+32 DUAL MODULUS PRESCALER  
NOTES:  
1. Receiver 1st I.F. = 45 MHz, low side injection; Receiver 2nd I.F. = 11.7 MHz, low side injection.  
2. Duplex operation with 45 MHz receive/transmit separation.  
3. f = 7.5 kHz, + R = 1480.  
R
4. N  
total  
= N • 32 + A = 27,501 to 28,166: N = 859 to 880; A = 0 to 31.  
5. Only one implementation is shown. Various other configurations and dual–modulus prescaling values to ÷128/÷129 are possible.  
Figure 14. 666 Channel, Computer Controlled, Mobile Radio Telephone Synthesizer for  
800 MHz Cellular Radio Systems  
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OUTLINE DIMENSIONS  
SOG = -6P  
(MC145146-6P)  
CASE 751D-04  
-A-  
NOTES:  
20  
11  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982  
2. CONTROLLING DIMENSION: MILLIMETER  
3. DIMENSIONA AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.150 (0.006)  
PER SIDE  
-B-  
P 10 PL  
M
M
0.25 (0.010)  
B
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.13 (0.005) TOTAL, IN  
EXCESS OF D DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
1
1
0
J
INCHES  
MIN  
12.65  
7.40  
2.35  
0.35  
0.50  
MILLIMETERS  
M
S
S
0.25 (0.010)  
T
B
A
DIM  
A
B
C
D
MAX  
12.95  
7.60  
2.65  
0.49  
0.90  
MIN  
MAX  
0.510  
0.299  
0.104  
0.019  
0.035  
0.499  
0.292  
0.093  
0.014  
0.020  
F
F
R X 45°  
G
1.27 BSC  
0.050 BSC  
J
K
0.25  
0.10  
0.32  
0.25  
0.010  
0.020  
0.012  
0.035  
C
M
P
R
10.05  
0.25  
10.56  
0.75  
.0395  
0.010  
0.415  
0.029  
-T-  
M
K
PLASTIC DIP  
(MC145146RP)  
CASE 738-03  
-A-  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982  
20  
1
11  
0
2. CONTROLLING DIMENSION: INCH  
3. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL  
B
1
4. DIMENSION B DOES NOT INCLUDE MOLD  
FLASH  
C
L
INCHES  
MIN  
1.010  
0.240  
0.150  
0.015  
MILLIMETERS  
DIM  
A
B
C
D
E
MAX  
1.070  
.0260  
0.180  
0.022  
MIN  
25.66  
6.10  
3.81  
0.39  
MAX  
27.17  
6.60  
4.57  
0.55  
-T-  
SEATING  
PLANE  
K
M
0.050 BSC  
1.27BSC  
F
G
0.050  
0.100 BSC  
0.070  
1.27  
2.54 BSC  
1.77  
E
N
J
K
L
M
N
0.008  
0.110  
0.300 BSC  
0.015  
0.140  
0.21  
2.80  
7.62 BSC  
0.38  
3.55  
G
F
J 20 PL  
0.25 (0.010)  
D 20 PL  
M
M
T
B
M
M
0.25 (0.010)  
T
A
0.020  
0.040  
0.51  
1.01  
Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliabili-  
ty, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit  
described herein; neither does it convey any license under its patent rights nor the rights of others. “Typical” parameters which  
may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the customer’s  
technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc.  
Page 12 of 12  
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