L2SC4617RT1G [LEIDITECH]
general purpose transistors NPN Silicon;
| 型号： | L2SC4617RT1G |
| 厂家： | 
Leiditech |
| 描述： | general purpose transistors NPN Silicon |
| 文件： | 总4页 (文件大小：468K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Series
L2SC4617RLT1G
general purpose transistors NPN Silicon
NPN Silicon
z We declare that the material of product compliance with RoHS requirements.
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
60
Unit
V
3
V
CBO
V
CEO
EBO
V
IC
50
V
1
7
V
0.15
A
2
SC-89
Collector power
dissipation
P
C
0.15
W
Tj
Tstg
150
˚C
˚C
Junction temperature
Storage temperature
−
55~+150
COLLECTOR
3
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ. Max.
Unit
V
Conditions
BVCBO
60
50
7
−
−
−
−
I
I
I
C
=
=
50µA
Collector-base breakdown voltage
Collector-emitter breakdown voltage BV
1
CEO
V
C
1µA
BASE
2
BVEBO
−
−
V
E
=
50µA
Emitter-base breakdown voltage
Collector cutoff current
EMITTER
I
CBO
EBO
−
−
0.1
0.1
0.5
560
−
µA
µA
V
V
V
CB
=
60V
EB=7
/I 50mA/5mA
6V, I 1mA
I
−
−
V
Emitter cutoff current
V
CE(sat)
FE
−
−
IC
B
=
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
h
120
−
−
−
V
V
V
CE
CE
CB
=
C
=
f
T
180
2.0
MHz
pF
=
12V, I
12V, I
E=2mA, f=30MHz
Cob
−
3.5
=
E=
0A, f 1MHz
=
Output capacitance
!Device marking
L2SC4617QT1G=BQ L2SC4617RT1G=BR L2SC4617ST1G=BS
hFE values are classified as follows:
!
Item
Q
R
S
h
FE
120~270
180~390
270~560
ORDERING INFORMATION
Device
Marking
Shipping
BQ
BQ
BR
BR
L2SC4617QT1G
L2SC4617QT3G
L2SC4617RT1G
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
L2SC4617RT3G
L2SC4617ST1G
L2SC4617ST3G
BS
BS
1/4
Rev :01.06.2017
www.leiditech.com
Series
L2SC4617RLT1G
!Electrical characterristic curves
0.50mA
10
100
80
50
Ta=25°C
30µA
27µA
24µA
21µA
V
CE=6V
Ta=25°C
20
10
5
8
6
4
0.30mA
0.25mA
0.20mA
60
18µA
15µA
12µA
9µA
C
°
2
1
100
0.15mA
0.10mA
0.05mA
=
40
Ta
0.5
6µA
20
0
2
0
3µA
0.2
0.1
I =0A
B
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics ( Ι )
characteristics ( ΙΙ )
500
500
0.5
Ta=25°C
Ta=25°C
V =
CE
5V
Ta=100°C
0.2
25°C
V
CE=5V
3V
1V
200
100
50
200
100
50
−55°C
I
C
/I
B
=50
20
0.1
10
0.05
0.02
0.01
20
10
20
10
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig. 6 Collector-emitter saturation
voltage vs. collector current
collector current ( Ι )
collector current ( ΙΙ )
2/4
Rev :01.06.2017
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Series
L2SC4617RLT1G
0.5
0.2
0.5
C B
I /I =10
IC/IB=50
Ta=25°C
CE
V
=6V
500
Ta=100°C
25°C
0.2
0.1
−55°C
Ta=100°C
25°C
0.1
−55°C
200
0.05
0.05
0.02
0.01
100
50
0.02
0.01
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2
0.5
1
2
5
10
20
50 100
−0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
Fig.9 Gain bandwidth product vs.
emitter current
voltage vs. collector current ( Ι )
20
Ta=25°C
Ta=25°C
Z
f=32MH
200
100
50
f
I
I
=1MHz
CB
=6V
V
E
=0A
=0A
10
5
C
2
1
20
10
−0.2
−0.5
−1
−2
−5
(mA)
−10
0.2
0.5
1
2
5
10 20
50
EMITTER CURRENT : I
E
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.11 Base-collector time constant
vs. emitter current
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
3/4
Rev :01.06.2017
www.leiditech.com
Series
L2SC4617RLT1G
SC-89
A
-X-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
-Y-
1
2
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
K
MILLIMETERS
NOM
INCHES
NOM
G
2 PL
DIM MIN
MAX
1.70
0.95
0.80
0.33
MIN
0.059
0.030
0.024
0.009
MAX
0.067
0.040
0.031
0.013
A
B
C
D
G
H
J
1.50
1.60
0.85
0.063
0.034
3 PL
D
0.75
0.60
0.23
M
0.70
0.28
0.028
0.011
0.08 (0.003)
X Y
0.50 BSC
0.53 REF
0.15
0.020 BSC
0.021 REF
0.006
0.10
0.30
0.20
0.50
0.004
0.012
0.008
0.020
K
L
0.40
0.016
1.10 REF
−−−
−−−
0.043 REF
−−−
−−−
M
N
S
−−−
−−−
10
10
−−−
−−−
10
10
_
_
N
M
_
_
J
1.50
1.60
1.70
0.059
0.063
0.067
C
SEATING
PLANE
-T-
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
4/4
Rev :01.06.2017
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