L2SC5343QLT1G [LRC]

General Purpose Transistors NPN Silicon; 通用晶体管NPN硅
L2SC5343QLT1G
型号: L2SC5343QLT1G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

General Purpose Transistors NPN Silicon
通用晶体管NPN硅

晶体 晶体管
文件: 总4页 (文件大小:354K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
L2SC5343QLT1G  
Series  
FEATURE  
3
ƽ
Excellent hFE linearity  
:hFE(2)=100(Typ) at VCE=6V,IC=150Ma  
:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ).  
1
2
z Low noise:NF=1Db(Typ).at f=1KHz.  
SOT– 23  
ƽWe declare that the material of product compliance with RoHS requirements.  
DEVICE MARKING AND ORDERING INFORMATION  
COLLECTOR  
3
Device  
Marking  
Shipping  
L2SC5343QLT1G  
7Q  
3000/Tape&Reel  
L2SC5343QLT3G  
L2SC5343RLT1G  
7Q  
7R  
10000/Tape&Reel  
3000/Tape&Reel  
1
BASE  
2
EMITTER  
7R  
7S  
7S  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
L2SC5343RLT3G  
L2SC5343SLT1G  
L2SC5343SLT3G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
50  
V
Collector-Base Voltage  
Emitter-Base Voltage  
VCBO  
VEBO  
60  
5
V
V
Collector current-continuoun  
Collector current-continuoun  
Collector Dissipation  
IC  
IB  
150  
50  
mA  
mA  
P
C
200  
mW  
Junction and Storage Temperature Tj, Tstg  
-55~150  
Rev.O 1/4  
LESHAN RADIO COMPANY, LTD.  
L2SC5343QLT1G Series  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Parameter  
Symbol  
Test conditions  
MIN  
60  
50  
5
TYP MAX UNIT  
Collector-base breakdown voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=100μA,IE=0  
IC=10mA,IB=0  
IE=10μA,IC=0  
VCB=60V,IE=0  
VEB=5V,IC=0  
V
V
V
Collector-emitter breakdown  
voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
0.1  
μA  
μA  
Emitter cut-off current  
DC current gain  
IEBO  
0.1  
hFE  
VCE=6V,IC=1mA  
120  
80  
560  
0.25  
Collector-emitter saturation  
voltage  
IC=100mA, IB=10mA  
VCE(sat)  
0.1  
V
Transition frequency  
Output capacitance  
Noise Figure  
VCE=10V, IC= 1mA  
fT  
MHz  
pF  
VCB=10V, IE=0,f=1kHz  
VCE=6V,IC=0.1mA,f=1kHz  
Cob  
NF  
3.5  
10  
dB  
CLASSIFICATION OF hFE  
Rank  
Q
R
S
120-270  
180-390  
270-560  
Range  
Rev.O 2/4  
LESHAN RADIO COMPANY, LTD.  
L2SC5343QLT1G Series  
Electrical Characteristic Curves  
Fig. 2 IC -VBE  
Fig. 1 PC –Ta  
Fig. 4 hFE -IC  
Fig. 3 IC -VCE  
Fig. 5 VCE(sat) -IC  
Rev.O 3/4  
LESHAN RADIO COMPANY, LTD.  
L2SC5343QLT1G Series  
SOT-23  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
L
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3
S
B
1
2
INCHES  
MAX  
MILLIMETERS  
DIM  
MIN  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
V
G
A
B
C
D
G
H
J
0.1102  
0.0472  
0.0350  
0.0150  
0.0701  
0.0005  
0.0034  
0.0140  
0.0350  
0.0830  
0.0177  
0.1197  
0.0551  
0.0440  
0.0200  
0.0807  
0.0040  
0.0070  
0.0285  
0.0401  
0.1039  
0.0236  
C
H
J
D
K
L
K
S
V
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
Rev.O 4/4  

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