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LBZT52B30T1G [LEIDITECH]

500mw Power Dissipation;
LBZT52B30T1G
型号： LBZT52B30T1G
厂家： Leiditech    Leiditech
描述：

500mw Power Dissipation
文件： 总3页 (文件大小：509K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Series  
LBZT52B2V0T1G  
Features:  
*500mw Power Dissipation  
1
*Ideal for Surface Mountted Application  
*Zener Breakdown Voltage Range 2.0V to 36V  
*Pb-Free package is available  
2
Mechanical Data:  
SOD-123  
*Case : SOD-123 Molded plastic  
*Terminals: Solderable per MIL-STD-202, Method 208  
*Polarity: Cathode Indicated by Polarity Band  
*Marking: Marking Code (See Specific marking table)  
*Weigh: 0.01grams(approx)  
Equivalent Circuit Diagram  
1
2
Cathode  
Anode  
Maximum Ratings and Electrical Characteristics  
(TA=25 C Unless Otherwise Noted)  
Characteristics  
Symbol  
Value  
Unit  
Total Power Dissipation on FR-5 Board(1)  
500  
305  
PD  
R JA  
VF  
mW  
C/W  
V
Thermal Resistance Junction to Ambient Air (1)  
Forward Voltage @ IF=10mA  
0.9  
Junction and Storage Temperature Range  
Tj,TSTG  
-55 to +150  
C
2
NOTES:  
1. Device mounted on ceramic PCB; 7.6mm 9.4mm 0.87mm with pad areas 25mm  
Device Marking Code  
Ratings and Characteristic curves  
Device  
Marking  
Device  
Marking  
0.6  
LBZT52B2V0T1G  
02  
LBZT52B9V1T1G  
LBZT52B10T1G  
LBZT52B11T1G  
LBZT52B12T1G  
L2  
05  
15  
LBZT52B2V2T1G  
LBZT52B2V4T1G  
0.5  
12  
22  
32  
0.4  
0.3  
0.2  
0.1  
LBZT52B2V7T1G  
LBZT52B3V0T1G  
25  
35  
LBZT52B13T1G  
LBZT52B15T1G  
LBZT52B16T1G  
42  
52  
62  
72  
82  
LBZT52B3V3T1G  
LBZT52B3V6T1G  
LBZT52B3V9T1G  
LBZT52B4V3T1G  
LBZT52B4V7T1G  
45  
55  
65  
LBZT52B18T1G  
LBZT52B20T1G  
LBZT52B22T1G  
LBZT52B24T1G  
75  
85  
0
92  
A2  
C2  
E2  
F2  
0
25  
50  
75  
100  
125  
150  
O
LBZT52B5V1T1G  
LBZT52B5V6T1G  
LBZT52B6V2T1G  
LBZT52B6V8T1G  
LBZT52B7V5T1G  
LBZT52B8V2T1G  
95  
TA,AMBIENT TEMPERATURE( C)  
FIG. 1 Power Disspation vs Ambient temperaute  
LBZT52B27T1G  
LBZT52B30T1G  
A5  
C5  
E5  
F5  
-
LBZT52B33T1G  
LBZT52B36T1G  
-
H2  
J2  
1/3  
Rev :01.06.2018  
www.leiditech.com  
Series  
LBZT52B2V0T1G  
Electrical Characteristics ( TA=25 C unless otherwise noted, VF =0.9V Max@ IF =10mA)  
Operating  
resistance  
Rising operating  
resistance  
Reverse curre  
Zener voltage  
V
Z
(V)  
Z
Z
(Ω)  
Zzk(Ω)  
Device  
I
R
(µA)  
I
Z
I
Z
I
Z
V
R
Min.  
Max.  
Max.  
Max.  
Max.  
(mA)  
(mA)  
(mA)  
0.5  
0.5  
0.5  
0.5  
0.5  
(V)  
0.5  
0.7  
1.0  
1.0  
1.0  
LBZT52B2V0T1G  
LBZT52B2V2T1G  
2.020  
2.220  
2.430  
2.690  
3.010  
2.200  
2.410  
2.630  
2.910  
3.220  
5
5
5
5
5
100  
100  
100  
110  
120  
5
5
5
5
5
1000  
1000  
1000  
1000  
1000  
120  
120  
100  
100  
50  
LBZT52B2V4T1G  
LBZT52B2V7T1G  
LBZT52B3V0T1G  
LBZT52B3V3T1G  
LBZT52B3V6T1G  
LBZT52B3V9T1G  
3.320  
3.600  
3.530  
3.845  
5
5
120  
100  
5
5
1000  
1000  
0.5  
1.0  
20  
10  
1.0  
1.0  
3.890  
4.170  
4.160  
4.430  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100  
100  
100  
80  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1000  
1000  
800  
500  
200  
100  
60  
1.0  
1.0  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
5
1.0  
1.0  
1.0  
1.5  
2.5  
3.0  
3.5  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
5
LBZT52B4V3T1G  
LBZT52B4V7T1G  
LBZT52B5V1T1G  
LBZT52B5V6T1G  
4.550  
4.750  
2
4.980  
5.200  
2
5.490  
5.730  
60  
1
6.060  
6.330  
60  
1
LBZT52B6V2T1G  
LBZT52B6V8T1G  
LBZT52B7V5T1G  
LBZT52B8V2T1G  
6.650  
6.930  
40  
0.5  
0.5  
0.5  
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
7.280  
7.600  
30  
60  
8.020  
8.360  
30  
60  
8.850  
9.230  
30  
60  
LBZT52B9V1T1G  
LBZT52B10T1G  
LBZT52B11T1G  
9.770  
10.210  
11.220  
12.240  
13.490  
14.980  
16.510  
18.350  
20.390  
22.470  
24.780  
27.530  
30.690  
33.790  
36.870  
30  
60  
10.760  
11.740  
12.910  
14.340  
15.850  
17.560  
19.520  
21.540  
23.720  
26.190  
29.190  
32.150  
35.070  
30  
60  
30  
80  
LBZT52B12T1G  
LBZT52B13T1G  
37  
80  
10.0  
11.0  
12.0  
13.0  
15.0  
17.0  
19.0  
21.0  
23.0  
25.0  
27.0  
42  
80  
LBZT52B15T1G  
LBZT52B16T1G  
50  
80  
65  
80  
LBZT52B18T1G  
LBZT52B20T1G  
85  
100  
100  
120  
150  
200  
250  
300  
100  
120  
150  
200  
250  
300  
LBZT52B22T1G  
LBZT52B24T1G  
LBZT52B27T1G  
LBZT52B30T1G  
LBZT52B33T1G  
LBZT52B36T1G  
Notes) 1. The Zener voltage (Vz) is measured 40ms after power is supplied.  
2. The operating resistances (Z  
z
, Zzk) are measured by superimposing a minute alternating current on the regulated current (I ).  
z
2/3  
Rev :01.06.2018  
www.leiditech.com  
Series  
LBZT52B2V0T1G  
SOD−123  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
D
A
A1  
2. CONTROLLING DIMENSION: INCH.  
1
MILLIMETERS  
INCHES  
NOM  
DIM MIN  
NOM  
1.17  
0.05  
0.61  
−−−  
MAX  
1.35  
0.10  
0.71  
0.15  
1.80  
2.84  
3.86  
−−−  
MIN  
0.037  
0.000  
0.020  
−−−  
MAX  
0.053  
0.004  
0.028  
0.006  
0.071  
0.112  
0.152  
−−−  
A
A1  
b
0.94  
0.00  
0.51  
−−−  
0.046  
0.002  
0.024  
−−−  
c
E
H
E
D
1.40  
2.54  
3.56  
1.60  
2.69  
3.68  
−−−  
0.055  
0.100  
0.140  
0.010  
0.063  
0.106  
0.145  
−−−  
E
H
E
L
0.25  
STYLE 1:  
L
PIN 1. CATHODE  
2. ANODE  
2
C
b
SOLDERING FOOTPRINT*  
0.91  
0.036  
1.22  
0.048  
2.36  
0.093  
4.19  
0.165  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
Shanghai Leiditech Electronic Co.,Ltd  
Email: sale1@leiditech.com  
Tel : +86- 021 50828806  
Fax : +86- 021 50477059  
3/3  
Rev :01.06.2018  
www.leiditech.com  

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