LDTC144EET1G [LEIDITECH]
Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network;
| 型号： | LDTC144EET1G |
| 厂家： | 
Leiditech |
| 描述： | Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 晶体管 |
| 文件： | 总9页 (文件大小：1383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LDTC114EET1G Series
S-LDTC114EET1G Series
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
SC-89
PIN 3
COLLECTOR
(OUTPUT)
• Simplifies Circuit Design
• Reduces Board Space
PIN 1
R1
BASE
• Reduces Component Count
(INPUT)
R2
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
PIN 2
EMITTER
(GROUND)
•
We declare that the material of product compliance with
RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
V
CBO
CEO
V
50
Vdc
I
C
100
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation,
P
D
FR−4 Board (Note 1) @ T = 25°C
Derate above 25°C
200
1.6
mW
mW/°C
A
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
q
JA
600
°C/W
Total Device Dissipation,
P
D
FR−4 Board (Note 2) @ T = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
A
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
q
JA
400
°C/W
Junction and Storage Temperature
Range
T , T
−55 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
1/9
Rev :01.06.2018
www.leiditech.com
LDTC114EET1G Series
S-LDTC114EET1G Series
ORDERING INFORMATION AND RESISTOR VALUES
†
Device
LDTC114EET1G
Marking
R1 (K)
R2 (K)
Package
SC−89
Shipping
8A
10
10
3000 Tape & Reel
3000 Tape & Reel
8B
8C
8D
94
22
47
22
47
SC−89
LDTC124EET1G
LDTC144EET1G
LDTC114YET1G
LDTC114TET1G
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
10
47
∞
10
8F
8H
4.7
2.2
∞
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
LDTC143TET1G
LDTC123EET1G
2.2
LDTC143EET1G
8J
8K
8L
4.7
4.7
22
4.7
47
SC−89
SC−89
LDTC143ZET1G
LDTC124XET1G
3000 Tape & Reel
47
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
LDTC123JET1G
8M
8N
8P
2.2
100
47
47
SC−89
SC−89
SC−89
100
22
LDTC115EET1G
LDTC144WET1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector−Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
LDTC114EET1G
LDTC124EET1G
LDTC144EET1G
LDTC114YET1G
LDTC114TET1G
LDTC143TET1G
LDTC123EET1G
LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC115EET1G
LDTC144WET1G
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector−Emitter Breakdown Voltage (Note 3)
(I = 2.0 mA, I = 0)
C
B
2/9
Rev :01.06.2018
www.leiditech.com
LDTC114EET1G Series
S-LDTC114EET1G Series
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 3)
DC Current Gain
LDTC114EET1G
LDTC124EET1G
LDTC144EET1G
LDTC114YET1G
LDTC114TET1G
LDTC143TET1G
LDTC123EET1G
LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC115EET1G
LDTC144WET1G
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
15
CE
C
80
160
160
8.0
15
80
80
80
80
80
30
200
150
140
150
140
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
Vdc
C
B
(I = 10 mA, I = 5 mA) LDTC123EET1G
C
B
(I = 10 mA, I = 1 mA) LDTC143TET1G/LDTC114TET1G/
C
B
LDTC143EET1G/LDTC143ZET1G/LDTC124XET1G
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
LDTC114EET1G
LDTC124EET1G
LDTC114YET1G
LDTC114TET1G
LDTC143TET1G
LDTC123EET1G
LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC144EET1G
LDTC115EET1G
LDTC144WET1G
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
V
OH
4.9
−
−
Vdc
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
LDTC143TET1G
CC
B
L
LDTC143ZET1G
LDTC114TET1G
LDTC115 EET1G
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
Input Resistor
kW
LDTC114EET1G
LDTC124EET1G
LDTC144EET1G
LDTC114YET1G
LDTC114TET1G
LDTC143TET1G
LDTC123EET1G
LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC115EET1G
LDTC144WET1G
15.4
1.54
70
32.9
R /R
1
Resistor Ratio
LDTC114EET1G/LDTC124EET1G/
LDTC144EET1G/LDTC115EET1G
2
0.8
0.17
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
LDTC114YET1G
LDTC143TET1G/LDTC114TET1G
LDTC123EET1G/LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
0.8
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
LDTC144WET1G
3/9
Rev :01.06.2018
www.leiditech.com
LDTC114EET1G Series
S-LDTC114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EET1G
1
1000
100
10
Ic/Ib=10
Vce=10V
0.1
0.01
1
0
10
IC, COLLECTOR CURRENT (mA)
-55℃ 25℃ 75℃ 100℃
20
30
40
50
60
0
20
40
IC, COLLECTOR CURRENT (mA)
25℃ 75℃ 100℃
60
80
100
120
125℃
-55℃
125℃
Fig. 1 VCE(sat) VS IC
Fig. 2 DC CURRENT GAIN
100
10
4.5
4
Vo=5V
f = 1 MHz
IE = 0 A
3.5
3
1
2.5
2
0.1
1.5
1
0.01
0.5
0
0.001
0
10
20
30
40
50
60
0
0.5
1
1.5
2
2.5
3
3.5
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
-25℃ 25℃
-55℃
75℃
125℃
Fig. 3 OUTPUT CAPACITANCE
Fig. 4 OUTPUT CURRENT VS INPUT VOLTAGE
4/9
Rev :01.06.2018
www.leiditech.com
LDTC114EET1G Series
S-LDTC114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EET1G
100
10
1
Vo=0.2V
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
-25℃ 25℃ 75℃
-55℃
125℃
Fig. 5 INPUT VOLTAGE VS OUTPUT CURRENT
5/9
Rev :01.06.2018
www.leiditech.com
LDTC114EET1G Series
S-LDTC114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC115EET1G
1
1000
100
10
Ic/Ib=10
Vce=10V
0.1
0.01
0
10
IC, COLLECTOR CURRENT (mA)
-55℃ 25℃ 75℃ 100℃
20
30
40
50
60
1
10
IC, COLLECTOR CURRENT (mA)
100
125℃
-55℃
25℃
75℃
100℃
125℃
Fig. 6 VCE(sat) VS IC
Fig. 7 DC CURRENT GAIN
4.5
100
10
f = 1 MHz
IE = 0 A
Vo=5V
4
3.5
3
1
2.5
2
0.1
1.5
1
0.01
0.5
0
0.001
0
10
20
30
40
50
60
0
0.5
1
1.5
Vin, INPUT VOLTAGE (V)
-25℃ 25℃ 75℃
2
2.5
3
3.5
VR, REVERSE BIAS VOLTAGE (V)
-55℃
125℃
Fig. 8 OUTPUT CAPACITANCE
Fig. 9 OUTPUT CURRENT VS INPUT VOLTAGE
6/9
Rev :01.06.2018
www.leiditech.com
LDTC114EET1G Series
S-LDTC114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC115EET1G
100
10
1
Vo=0.2V
0
10
20
IC, COLLECTOR CURRENT (mA)
-25℃ 25℃ 75℃
30
40
50
-55℃
125℃
Fig. 10 INPUT VOLTAGE VS OUTPUT CURRENT
7/9
Rev :01.06.2018
www.leiditech.com
LDTC114EET1G Series
S-LDTC114EET1G Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Fig. 11 LEVEL SHIFTER:CONNECTS 12 TO 24 VOLT CIRCUITS TO LOGIC
+12 V
V
CC
OUT
IN
LOAD
Fig. 13 INEXPENSIVE,UNREGULATED CURRENT SOURCE
Fig. 12 OPEN COLLECTOR INVERTER:
INVERTS THE INPUT SIGNAL
8/9
Rev :01.06.2018
www.leiditech.com
LDTC114EET1G Series
S-LDTC114EET1G Series
SC-89
A
-X-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
-Y-
1
2
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
K
MILLIMETERS
NOM
INCHES
NOM
G
2 PL
DIM MIN
MAX
1.70
0.95
0.80
0.33
MIN
0.059
0.030
0.024
0.009
MAX
0.067
0.040
0.031
0.013
A
B
C
D
G
H
J
1.50
1.60
0.85
0.063
0.034
3 PL
D
0.75
0.60
0.23
M
0.70
0.28
0.028
0.011
0.08 (0.003)
X Y
0.50 BSC
0.53 REF
0.15
0.020 BSC
0.021 REF
0.006
0.10
0.30
0.20
0.50
0.004
0.012
0.008
0.020
K
L
0.40
0.016
1.10 REF
−−−
−−−
0.043 REF
−−−
−−−
M
N
S
−−−
−−−
10
10
−−−
−−−
10
10
_
_
N
M
_
_
J
1.50
1.60
1.70
0.059
0.063
0.067
C
SEATING
PLANE
-T-
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
9/9
Rev :01.06.2018
www.leiditech.com
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