LMUN5212T1G [LEIDITECH]
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network;
| 型号： | LMUN5212T1G |
| 厂家： | 
Leiditech |
| 描述： | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network |
| 文件： | 总10页 (文件大小：925K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMUN5211T1GSeries
S-LMUN5211T1G
Series
Bias Resistor Transistor
3
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network con-
sisting of two resistors; a series base resistor and a base–emitter resistor.
The BRT eliminates these individual components by integrating them into a
single device. The use of a BRT can reduce both system cost and board
space. The device is housed in the SC–70/SOT–323 package which is
designed for low power surface mount applications.
1
2
SC-70 / SOT-323
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 1
BASE
(INPUT)
PIN 2
EMITTER
(GROUND)
• Simplifies Circuit Design
MARKINGDIAGRAM
• Reduces Board Space
• Reduces Component Count
• The SC–70/SOT–323 package can be soldered using wave or
reflow. The modified gull–winged leads absorb thermal stress
during soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
8X
M
8x = Specific Device Code
x = (See Marking Table)
M= Date Code
Use the Device Number to order the 7 inch/3000 unit reel.
• Pb-Free package is available
•S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2
of this data sheet.
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
VCBO
VCEO
IC
Value
Unit
Vdc
Rating
Collector-Base Voltage
50
Collector-Emitter Voltage
Collector Current
50
Vdc
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
PD
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
mW
T = 25°C
A
Derate above 25°C
mW/°C
°C/W
°C/W
°C
Thermal Resistance –
Junction-to-Ambient
RθJA
RθJL
618 (Note 1.)
403 (Note 2.)
Thermal Resistance –
Junction-to-Lead
280 (Note 1.)
332 (Note 2.)
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
1/10
Rev :01.06.2017
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LMUN5211T1GSeries
S-LMUN5211T1G
Series
DEVICE MARKING RESISTOR VALUES AND ORDERING INFORMATION
Device
LMUN5211T1G
LMUN5211T3G
LMUN5212T1G
LMUN5212T3G
LMUN5213T1G
LMUN5213T3G
LMUN5214T1G
LMUN5214T3G
Package
Marking
8A
R1(K)
10
R2(K)
10
Shipping
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
SC-70/SOT-323
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
8A
10
10
8B
22
22
8B
22
22
8C
47
47
8C
47
47
8D
10
47
8D
10
47
LMUN5215T1G(Note 3) SC-70/SOT-323
LMUN5215T3G SC-70/SOT-323
LMUN5216T1G(Note 3) SC-70/SOT-323
LMUN5216T3G SC-70/SOT-323
LMUN5230T1G(Note 3) SC-70/SOT-323
LMUN5230T3G SC-70/SOT-323
LMUN5231T1G(Note 3) SC-70/SOT-323
LMUN5231T3G SC-70/SOT-323
LMUN5232T1G(Note 3) SC-70/SOT-323
LMUN5232T3G SC-70/SOT-323
LMUN5233T1G(Note 3) SC-70/SOT-323
LMUN5233T3G SC-70/SOT-323
LMUN5234T1G(Note 3) SC-70/SOT-323
LMUN5234T3G SC-70/SOT-323
LMUN5235T1G(Note 3) SC-70/SOT-323
LMUN5235T3G SC-70/SOT-323
LMUN5236T1G(Note 3) SC-70/SOT-323
LMUN5236T3G SC-70/SOT-323
LMUN5237T1G(Note 3) SC-70/SOT-323
LMUN5237T3G SC-70/SOT-323
8E
8E
8F
8F
8G
8G
8H
8H
8J
10
10
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Ğ
Ğ
4.7
4.7
1
Ğ
Ğ
1
1
1
2.2
2.2
4.7
4.7
4.7
4.7
22
2.2
2.2
4.7
4.7
47
47
47
47
47
47
100
100
22
22
8J
8K
8K
8L
8L
22
8M
8M
8N
8N
8P
8P
2.2
2.2
100
100
47
47
3. New devices. Updated curves to follow in subsequent data sheets.
2/10
Rev :01.06.2017
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LMUN5211T1GSeries
S-LMUN5211T1G
Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
–
–
–
–
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
LMUN5211T1G
LMUN5212T1G
LMUN5213T1G
LMUN5214T1G
LMUN5215T1G
LMUN5216T1G
LMUN5230T1G
LMUN5231T1G
LMUN5232T1G
LMUN5233T1G
LMUN5234T1G
LMUN5235T1G
LMUN5236T1G
LMUN5237T1G
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector-Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
–
–
–
–
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown Voltage (Note 4.)
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 4.)
DC Current Gain
LMUN5211T1G
LMUN5212T1G
LMUN5213T1G
LMUN5214T1G
LMUN5215T1G
LMUN5216T1G
LMUN5230T1G
LMUN5231T1G
LMUN5232T1G
LMUN5233T1G
LMUN5234T1G
LMUN5235T1G
LMUN5236T1G
LMUN5237T1G
h
FE
35
60
80
60
–
–
–
–
–
–
–
–
–
–
–
–
–
–
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
5.0
CE
C
80
160
160
3.0
8.0
15
80
80
80
80
15
30
200
150
140
150
140
80
Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
–
–
0.25
Vdc
Vdc
C
B
(I = 10 mA, I = 5 mA) LMUN5230T1/LMUN5231T1
C
B
(I = 10 mA, I = 1 mA) LMUN5215T1/LMUN5216T1/
C
B
LMUN5232T1/LMUN5233T1/LMUN5234T1
Output Voltage (on)
V
OL
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
LMUN5211T1G
LMUN5212T1G
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
LMUN5214T1G
LMUN5215T1G
LMUN5216T1G
LMUN5230T1G
LMUN5231T1G
LMUN5232T1G
LMUN5233T1G
LMUN5234T1G
LMUN5235T1G
LMUN5213T1G
LMUN5236T1G
LMUN5237T1G
(V = 5.0 V, V = 3.5 V, R = 1.0 kΩ)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kΩ)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kΩ)
CC
B
L
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
3/10
Rev :01.06.2017
www.leiditech.com
LMUN5211T1GSeries
S-LMUN5211T1G
Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 5.) (Continued)
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kΩ)
V
OH
4.9
–
–
Vdc
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kΩ)
LMUN5230T1G
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kΩ)
LMUN5215T1G
LMUN5216T1G
LMUN5233T1G
CC
B
L
Input Resistor
LMUN5211T1G
LMUN5212T1G
LMUN5213T1G
LMUN5214T1G
LMUN5215T1G
LMUN5216T1G
LMUN5230T1G
LMUN5231T1G
LMUN5232T1G
LMUN5233T1G
LMUN5234T1G
LMUN5235T1G
LMUN5236T1G
LMUN5237T1G
R
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
kΩ
1
15.4
1.54
70
28.6
2.86
130
61.1
32.9
Resistor Rati LMUN5211T1G/LMUN5212T1G/LMUN5213T1G/
LMUN5236T1G
R /R
1 2
0.8
0.17
–
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
LMUN5214T1G
LMUN5215T1G/LMUN5216T1G
LMUN5230T1G/LMUN5231T1G/LMUN5232T1G
LMUN5233T1G
0.8
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
LMUN5234T1G
LMUN5235T1G
LMUN5237T1G
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
350
300
250
200
150
100
R
= 403°C/W
50
0
θ
JA
–50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
4/10
Rev :01.06.2017
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LMUN5211T1GSeries
S-LMUN5211T1G
Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5211T1G
1
1000
I /I = 10
C B
V
= 10 V
T Ă=Ă-25°C
CE
T
25°C
T Ă=Ă75°C
T
25°C
-25°C
0.1
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mT)
C
I , COLLECTOR CURRENT (mT)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T Ă=Ă-25°C
T
T = 25°C
T
1
0.1
2
1
0
0.01
0.001
V = 5 V
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BITS VOLTTGE (VOLTS)
R
V , INPUT VOLTTGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
= 0.2 V
T Ă=Ă-25°C
T
O
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mT)
C
Figure 6. Input Voltage versus Output Current
5/10
Rev :01.06.2017
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LMUN5211T1GSeries
S-LMUN5211T1G
Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5212T1G
1000
1
V
= 10 V
CE
I /I = 10
C B
T Ă=Ă75°C
T
25°C
25°C
T Ă=Ă-25°C
T
0.1
-25°C
75°C
100
0.01
10
0.001
1
10
100
0
20
40
50
I , COLLECTOR CURRENT (mT)
C
I , COLLECTOR CURRENT (mT)
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
I = 0 V
T Ă=Ă-25°C
T
E
T = 25°C
T
0.1
0.01
V = 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BITS VOLTTGE (VOLTS)
R
V , INPUT VOLTTGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
= 0.2 V
O
T Ă=Ă-25°C
T
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mT)
C
Figure 11. Input Voltage versus Output Current
6/10
Rev :01.06.2017
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LMUN5211T1GSeries
S-LMUN5211T1G
Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5213T1G
10
1
1000
V
= 10 V
I /I = 10
C B
CE
T Ă=Ă75°C
T
25°C
-25°C
25°C
100
T Ă=Ă-25°C
T
75°C
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mT)
40
50
1
10
100
I , COLLECTOR CURRENT (mT)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
I = 0 V
75°C
E
T Ă=Ă-25°C
T
0.8
T = 25°C
T
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BITS VOLTTGE (VOLTS)
R
V , INPUT VOLTTGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O
= 0.2 V
T Ă=Ă-25°C
T
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mT)
C
Figure 16. Input Voltage versus Output Current
7/10
Rev :01.06.2017
www.leiditech.com
LMUN5211T1GSeries
S-LMUN5211T1G
Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5214T1G
1
300
T Ă=Ă75°C
T
V
CE
= 10
I /I = 10
C B
T Ă=Ă-25°C
250
200
150
100
T
25°C
25°C
75°C
0.1
-25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mT)
C
I , COLLECTOR CURRENT (mT)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
l = 0 V
T Ă=Ă75°C
25°C
T
E
T = 25°C
T
-25°C
2.5
2
1.5
1
0.5
0
V = 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BITS VOLTTGE (VOLTS)
R
V , INPUT VOLTTGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V = 0.2 V
O
T Ă=Ă-25°C
T
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mT)
C
Figure 21. Input Voltage versus Output Current
8/10
Rev :01.06.2017
www.leiditech.com
LMUN5211T1GSeries
S-LMUN5211T1G
Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLTTED
LOTD
FROM µP OR
OTHER LOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
IN
LOTD
Figure 23. Open Collector Inverter:
Inverts the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
9/10
Rev :01.06.2017
www.leiditech.com
LMUN5211T1GSeries
S-LMUN5211T1G
Series
SC-70 / SOT
-323
NOTES:
1. DIMENSION
ING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
A
DIM
MIN
MAX
MIN
1.80
1.15
0.80
0.30
MAX
2.20
1.35
1.00
0.40
L
A
B
C
D
0.071 0.087
0.045 0.053
0.032 0.040
0.012 0.016
3
B
S
1
2
G
H
J
K
L
0.047 0.055
0.000 0.004
0.004 0.010
0.017 REF
0.026 BSC
0.028 REF
1.20
0.00
0.10
0.425 REF
0.650 BSC
0.700 REF
1.40
0.10
0.25
D
G
N
S
J
N
C
0.079 0.095
2.00
2.40
0.05 (0.002)
PIN 1. BASE
2. EMITTER
3. COLLECTOR
K
H
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
10/10
Rev :01.06.2017
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SI9137LG
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SI9122E
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