M8050HRLT3G [LEIDITECH]

General Purpose Transistors NPN Silicon;


型号：	M8050HRLT3G
厂家：	Leiditech
描述：	General Purpose Transistors NPN Silicon
文件：	总3页 (文件大小：378K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

M8050HQLTIG

Series

S-M8050HQLTIG

Series

General Purpose Transistors

NPN Silicon

Dimensions SOT-23

FEATURE

ƽHigh current capacity in compact package.

I_C=1.5 A.

ƽEpitaxial planar type.

ƽNPN complement: L8050H

Pb-Free Package is available.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Pin Configuration

DEVICE MARKING AND ORDERING INFORMATION

Shipping

Device

Marking

COLLECTOR

M8050HPLT1G

S-M8050HPLT1G

3000/Tape&Reel

1HA

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

M8050HPLT3G

M8050HQLT1G

M8050HQLT3G

S-M8050HPLT3G

S-M8050HQLT1G

S-M8050HQLT3G

BASE

1HC

EMITTER

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

M8050HRLT1G

S-M8050HRLT1G

1HE

1HG

M8050HRLT3G

M8050HSLT1G

M8050HSLT3G

S-M8050HRLT3G

S-M8050HSLT1G

S-M8050HSLT3G

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_CBO

V_EBO

1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

1. FR–5 = 1.0 x 0.75 x 0.062 in.

Rθ^{J A}

417

°C/W

°C

-55 to +150

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

01.06.2015

Rev :

1/3

www.leiditech.com

M8050HQLTIG

Series

S-M8050HQLTIG

Series

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(I_C=1.0mA)

–

V_(BR)CEO

V_(BR)EBO

V_(BR)CBO

Emitter-Base Breakdown Voltage

(I_E=100µΑ)

Collector-Base Breakdown Voltage

(I_C=100µΑ)

Collector Cutoff Current (V_CB=35V)

Emitter Cutoff Current (V_EB=4V)

ELECTRICAL CHARACTERISTICS (T

Characteristic

I_CBO

I_EBO

–

150

=25°C unless otherwise noted)

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

I^C=100mA,V^CE=1V

h_FE

100

600

0.5

Collector-Emitter Saturation Voltage

(I^C=800mA I^B=80mA)

V^CE(S)

NOTE :

h_FE

100~200

150~300

200~400

300~600

01.06.2015

Rev :

2/3

www.leiditech.com

M8050HQLTIG

Series

S-M8050HQLTIG

Series

SOT-23 Package Outline & Dimensions

Millimeters

Inches

Nom.

0.040

0.002

0.18

Symbol

Min. Nom. Max.

0.89 1.00 1.11

0.01 0.06 0.10

0.37 0.44 0.50

0.09 0.13 0.18

2.80 2.90 3.04

1.20 1.30 1.40

1.78 1.90 2.04

0.35 0.54 0.69

2.10 2.40 2.64

Min.

0.035

0.001

0.15

Max.

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.029

0.104

0.003

0.110

0.047

0.070

0.014

0.083

0.005

0.114

0.051

0.075

0.021

0.094

H_E

Soldering Footprint

Symbol

Millimeters

0.80

Inches

0.031

0.037

0.035

0.079

0.95

0.90

2.00

Shanghai Leiditech Electronic Co.,Ltd

Email: sale1@leiditech.com

Tel : +86- 021 50828806

Fax : +86- 021 50477059

01.06.2015

Rev :

3/3

www.leiditech.com

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