S-BC807-40 [LEIDITECH]
General Purpose Transistors PNP Silicon;
| 型号： | S-BC807-40 |
| 厂家： | 
Leiditech |
| 描述： | General Purpose Transistors PNP Silicon |
| 文件： | 总10页 (文件大小：902K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807-16
GeneralPurposeTransistors
PNPSilicon
FEATURE
3
ƽCollector current capability IC = -500 mA.
ƽCollector-emitter voltage VCEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
1
2
SOT–23
ƽ
ƽ
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
COLLECTOR
DEVICE MARKING AND ORDERING INFORMATION
1
Device
Marking
Shipping
BASE
5A1
3000/Tape&Reel
BC807-16
S-BC807-16
2
EMITTER
5B1
5C1
3000/Tape&Reel
3000/Tape&Reel
BC807-25
S-BC807-25
BC807-40
S-BC807-40
MAXIMUM RATINGS
Rating
Symbol
V CEO
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
–45
–50
V
V
V CBO
V EBO
–5.0
–500
V
Collector Current — Continuous
I C
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA
PD
= 25°C
225
1.8
mW
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
PD
556
°C/W
Alumina Substrate, (2) TA
Derate above 25°C
= 25°C
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
°C/W
°C
T J
, T stg
–55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1/10
Rev :01.06.2018
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BC807-16
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C = –10 mA)
V(BR)CEO
–45
–50
–5.0
—
—
—
—
—
—
V
V
V
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
V(BR)CES
Emitter–Base Breakdown Voltage
(IE = –1.0 µA)
V(BR)EBO
ICBO
Collector Cutoff Current
(V
CB = –20 V)
—
—
—
—
–100
–5.0
nA
(VCB = –20 V, TJ = 150°C)
µA
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h FE
—
(IC= –100 mA, VCE = –1.0 V)
BC807–16
100
—
250
BC807–25
BC807–40
160
250
40
—
—
—
400
600
—
(IC = –500 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
V CE(sat)
—
—
—
–0.7
–1.2
V
V
Base–Emitter On Voltage
V BE(on)
—
(IC = –500 mA, VCE= –1.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
—
—
MHz
pF
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
C obo
10
(VCB = –10 V, f = 1.0 MHz)
2/10
Rev :01.06.2018
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BC807-16
TYPICAL CHARACTERISTICS −BC807 −16
500
400
300
200
1
I /I = 10
C
B
V
CE
= 1 V
150°C
150°C
25°C
−55°C
25°C
0.1
−55°C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
= 5 V
−55°C
CE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
3/10
Rev :01.06.2018
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BC807-16
TYPICAL CHARACTERISTICS −BC807 −16
-1.0
-0.8
-0.6
-0.4
T = 25°C
J
I
=
C
-500 mA
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
= -10 mA
C
-0.01
-0.1
-1.0
I , BASE CURRENT (mA)
-10
-100
B
Figure 5. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
VB
for V
BE
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I , COLLECTOR CURRENT
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Temperature Coefficients
Figure 7. Capacitances
4/10
Rev :01.06.2018
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BC807-16
TYPICAL CHARACTERISTICS −BC807 −25
500
400
300
200
1
150°C
I /I = 10
C
B
V
CE
= 1 V
150°C
−55°C
25°C
25°C
0.1
−55°C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−55°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
1000
V
= 1 V
CE
T
A
= 25°C
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (A)
C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
5/10
Rev :01.06.2018
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BC807-16
TYPICAL CHARACTERISTICS −BC807 −25
-1.0
T = 25°C
J
-0.8
-0.6
-0.4
I =
C
-500 mA
I = -300 mA
C
-0.2
0
I = -100 mA
C
I = -10 mA
C
-0.01
-0.1
-1.0
I , BASE CURRENT (mA)
-10
-100
B
Figure 13. Saturation Region
100
+1.0
0
q
VC
for V
CE(sat)
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I , COLLECTOR CURRENT
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 14. Temperature Coefficients
Figure 15. Capacitances
6/10
Rev :01.06.2018
www.leiditech.com
BC807-16
TYPICAL CHARACTERISTICS −BC807 −40
1000
900
800
700
600
500
400
300
1
I /I = 10
C
B
V
CE
= 1 V
150°C
150°C
25°C
−55°C
0.1
25°C
−55°C
200
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
= 5 V
−55°C
CE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
25°C
−55°C
25°C
0.8
0.7
0.6
0.5
0.4
150°C
150°C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
Figure 19. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T
A
= 25°C
100
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (A)
C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
7/10
Rev :01.06.2018
www.leiditech.com
BC807-16
TYPICAL CHARACTERISTICS −BC807 −40
-1.0
T = 25°C
J
-0.8
-0.6
-0.4
I =
C
-500 mA
I = -300 mA
C
-0.2
0
I = -100 mA
C
I = -10 mA
C
-0.01
-0.1
-1.0
I , BASE CURRENT (mA)
-10
-100
B
Figure 21. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I , COLLECTOR CURRENT
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 22. Temperature Coefficients
Figure 23. Capacitances
8/10
Rev :01.06.2018
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BC807-16
TYPICAL CHARACTERISTICS −BC807 −40
1
1 mS
1 S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 24. Safe Operating Area
9/10
Rev :01.06.2018
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BC807-16
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
10/10
Rev :01.06.2018
www.leiditech.com
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