S-L8550HPLT1G [LEIDITECH]

High current capacity in compact package.;


型号：	S-L8550HPLT1G
厂家：	Leiditech
描述：	High current capacity in compact package.
文件：	总3页 (文件大小：469K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

L8550HPLT1G

Series

S-L8550HPLT1G

Series

Dimensions SOT-23

Pin Configuration

FEATURE

ƽHigh current capacity in compact package.

ƽEpitaxial planar type.

ƽPNP complement: L8550H

We declare that the material of product compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DEVICE MARKING AND ORDERING INFORMATION

Shipping

Device

Marking

3000/Tape&Reel

L8550HPLT1G

s-L8550HPLT1G

s-L8550HPLT3G

s-L8550HQLT1G

1HB

10000/Tape&Reel

3000/Tape&Reel

L8550HPLT3G

L8550HQLT1G

1HB

1HD

10000/Tape&Reel

3000/Tape&Reel

L8550HQLT3G

L8550HRLT1G

s-L8550HQLT3G

s-L8550HRLT1G

1HD

1HF

10000/Tape&Reel

3000/Tape&Reel

L8550HRLT3G

L8550HSLT1G

L8550HSLT3G

s-L8550HRLT3G

s-L8550HSLT1G

s-L8550HSLT3G

1HF

1HH

10000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_CBO

V_EBO

-25

-40

-5

-1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

Rθ^{J A}

417

°C/W

°C

-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev :01.06.2014

1/3

www.leiditech.com

L8550HPLT1G

Series

S-L8550HPLT1G

Series

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(I_C=-1.0mA)

–

V_(BR)CEO

V_(BR)EBO

V_(BR)CBO

-25

-5

Emitter-Base Breakdown Voltage

(I_E=-100µΑ)

Collector-Base Breakdown Voltage

(I_C=-100µΑ)

-40

Collector Cutoff Current (V_CB=-35V)

Emitter Cutoff Current (V_EB=-4V)

ELECTRICAL CHARACTERISTICS (T

Characteristic

I_CBO

I_EBO

–

-150

=25°C unless otherwise noted)

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

I^C=-100mA,V^CE=-1V

H_FE

100

600

-0.5

Collector-Emitter Saturation Voltage

(I^C=-800mA,I^B=-80mA)

V^CE(S)

NOTE :

h_FE

100~200

150~300

200~400

300~600

Rev :01.06.2014

2/3

www.leiditech.com

L8550HPLT1G

Series

S-L8550HPLT1G

Series

SOT-23

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M,1982

2. CONTROLLING DIMENSION: INCH.

INCHES

MAX

MILLIMETERS

DIM

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

Shanghai Leiditech Electronic Co.,Ltd

Email: sale1@leiditech.com

Tel : +86- 021 50828806

Fax : +86- 021 50477059

Rev :01.06.2014

3/3

www.leiditech.com

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