S-L8550SLT1G [LEIDITECH]

General Purpose Transistors PNP Silicon;
S-L8550SLT1G
型号: S-L8550SLT1G
厂家: Leiditech    Leiditech
描述:

General Purpose Transistors PNP Silicon

文件: 总4页 (文件大小:682K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
L8550PLT1G  
S-L8550PLT1G  
Series  
Series  
General Purpose Transistors  
PNP Silicon  
FEATURE  
We declare that the material of product compliance with RoHS requirements.  
S- Prefix for Automotive and Other Applications Requiring Unique Site  
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
3
2
1
DEVICE MARKING AND ORDERING INFORMATION  
Shipping  
Device  
Marking  
SOT-23  
85P  
3000/Tape&Reel  
s-L8550PLT1G  
s-L8550PLT3G  
s-L8550QLT1G  
L8550PLT1G  
85P  
10000/Tape&Reel  
3000/Tape&Reel  
COLLECTOR  
L8550PLT3G  
L8550QLT1G  
3
1YD  
1YD  
1
10000/Tape&Reel  
3000/Tape&Reel  
s-L8550QLT3G  
s-L8550RLT1G  
L8550QLT3G  
L8550RLT1G  
BASE  
1YF  
1YF  
1YH  
1YH  
2
EMITTER  
10000/Tape&Reel  
3000/Tape&Reel  
s-L8550RLT3G  
s-L8550SLT1G  
s-L8550SLT3G  
L8550RLT3G  
L8550SLT1G  
L8550SLT3G  
10000/Tape&Reel  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
-25  
Unit  
Collector-Emitter Voltage  
Collector-Base voltage  
Emitter-base Voltage  
Collector current-continuoun  
V CEO  
V CBO  
V EBO  
IC  
V
V
-40  
-5  
V
-800  
mAdc  
THERMALCHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR- 5 Board (1)  
T A = 25 °C  
Derate above 25 °C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
PD  
225  
1.8  
mW  
mW /°C  
°C/W  
RθJA  
PD  
556  
Alumina Substrate, (2) T A = 25 °C  
Derate above 25 °C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
300  
2.4  
mW  
mW /°C  
°C/W  
°C  
RθJA  
417  
T J , T stg -55 to +150  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
01.06.2017  
1/4  
Rev :  
www.leiditech.com  
L8550PLT1G  
S-L8550PLT1G  
Series  
Series  
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFFCHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(I C =-1.0mA)  
V (BR)CEO  
V (BR)EBO  
V (BR)CBO  
-25  
-5  
-40  
V
V
Emitter-Base Breakdown Voltage  
(I E = -100 µA)  
Collector-Base Breakdown voltage  
(I C= -100 µA)  
Collector Cutoff Current  
(VCB = -35 V)  
V
I
-150  
-150  
nA  
nA  
CBO  
Emitter Cutoff Current  
I EBO  
(VEB = -4V)  
1. FR-5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
ON CHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
DC Current Gain  
HFE  
100  
600  
(I C =-100mA, VCE=-1V)  
Collector-Emitter Saturation Voltage  
VCE(S)  
-0.5  
V
(I C =-800mA, I =-80mA)  
B
NOTE:  
*
P
Q
R
S
hFE  
100~200  
150~300  
200~400  
300~600  
01.06.2017  
2/4  
Rev :  
www.leiditech.com  
L8550PLT1G  
S-L8550PLT1G  
Series  
Series  
01.06.2017  
3/4  
Rev :  
www.leiditech.com  
L8550PLT1G  
S-L8550PLT1G  
Series  
Series  
SOT-23  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M,1982  
A
L
2. CONTROLLING DIMENSION: INCH.  
3
INCHES  
MAX  
MILLIMETERS  
DIM  
S
B
MIN  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
1
2
A
B
C
D
G
H
J
0.1102  
0.0472  
0.0350  
0.0150  
0.0701  
0.0005  
0.0034  
0.0140  
0.0350  
0.0830  
0.0177  
0.1197  
0.0551  
0.0440  
0.0200  
0.0807  
0.0040  
0.0070  
0.0285  
0.0401  
0.1039  
0.0236  
V
G
C
K
L
H
J
D
K
S
V
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
Shanghai Leiditech Electronic Co.,Ltd  
Email: sale1@leiditech.com  
Tel : +86- 021 50828806  
Fax : +86- 021 50477059  
01.06.2017  
4/4  
Rev :  
www.leiditech.com  

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