S-L9012SLT3G [LEIDITECH]

General Purpose Transistors;


型号：	S-L9012SLT3G
厂家：	Leiditech
描述：	General Purpose Transistors
文件：	总2页 (文件大小：273K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

L9012PLT1G

Series

S-L9012PLT1G

Series

General Purpose Transistors

PNP Silicon

Dimensions SOT-23

FEATURE

We declare that the material of product compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L9012PLT1G

S-L9012PLT1G

12P

3000/Tape&Reel

L9012PLT3G

12P

12Q

10000/Tape&Reel

3000/Tape&Reel

S- L9012PLT3G

Pin Configuration

L9012QLT1G

S- L9012QLT1G

L9012QLT3G

12Q

12R

10000/Tape&Reel

3000/Tape&Reel

S- L9012QLT3G

COLLECTOR

L9012RLT1G

S-L9012RLT1G

L9012RLT3G

12R

12S

10000/Tape&Reel

3000/Tape&Reel

S-L9012RLT3G

BASE

L9012SLT1G

S-L9012SLT1G

L9012SLT3G

12S

10000/Tape&Reel

EMITTER

S-L9012SLT3G

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

-20

Collector-Base Voltage

Emitter-Base Voltage

-40

-5

Collector current-continuoun

-500

mAdc

THERMAL CHARATEERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

P_D

T_A=25^oC

225

Derate above 25^oC

1.8

mW/^oC

^oC/W

Thermal Resistance, Junction to Ambient

R _{θ JA}

P_D

556

Total Device Dissipation

Alumina Substrate, (2) TA=25 ^oC

Derate above 25^oC

300

2.4

mW/^oC

^oC/W

^oC

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

Tj ,Tstg

-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

ELECTRICAL CHARACTERISTICS (T =25^oC unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC=-1.0mA)

V(BR)CEO

V(BR)EBO

V(BR)CBO

-20

Emitter-Base Breakdown Voltage

-5

(IE=-100

Collector-Base Breakdown Voltage

-40

(IC=-100 A)

-150

Collector Cutoff Current (VCB=-35V)

ICBO

IEBO

Emitter Cutoff Current (VBE=-4V)

1/2

Rev :01.06.2014

www.leiditech.com

L9012PLT1G

Series

S-L9012PLT1G

Series

ON CHARACTERISTICS

DC Current Gain

(IC=-50mA, VCE=-1V)

Hfe

100

600

Collector-Emitter Saturation Voltage

(IC=-500mA,IB=-50mA)

-0.6

VCE(S)

NOTE:

H_FE

100~200

150~300 200~400 300~600

SOT-23 (TO-236AB)

NOTES:

1. CONTROLLING DIMENSION: MILLIMETERS

2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH

SOLDER PLATING.

INCHES

MIN MAX

MILLIMETERS

DIM

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.45

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.60

1.02

2.50

0.60

0.1102 0.1197

0.0472 0.0551

0.0350 0.0440

0.0150 0.0200

0.0701 0.0807

0.0005 0.0040

0.0034 0.0070

0.0180 0.0236

0.0350 0.0401

0.0830 0.0984

0.0177 0.0236

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

Shanghai Leiditech Electronic Co.,Ltd

Email: sale1@leiditech.com

Tel : +86- 021 50828806

Fax : +86- 021 50477059

2/2

Rev :01.06.2014

www.leiditech.com

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