S-L9013QLT1G [LEIDITECH]

We declare that the material of product compliance with RoHS requirements;


型号：	S-L9013QLT1G
厂家：	Leiditech
描述：	We declare that the material of product compliance with RoHS requirements
文件：	总3页 (文件大小：456K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

L9013PLT1G

Series

S-L9013PLT1G

Series

NPN Silicon

FEATURE

We declare that the material of product compliance with RoHS requirements.

Dimensions SOT-23

Pin Configuration

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L9013PLT1G

S-L9013PLT1G

13P

3000/Tape&Reel

L9013PLT3G

13P

13Q

10000/Tape&Reel

3000/Tape&Reel

S-L9013PLT3G

L9013QLT1G

S-L9013QLT1G

L9013QLT3G

13Q

13R

10000/Tape&Reel

3000/Tape&Reel

S-L9013QLT3G

L9013RLT1G

S-L9013RLT1G

L9013RLT3G

13R

13S

10000/Tape&Reel

3000/Tape&Reel

S-L9013RLT3G

L9013SLT1G

S-L9013SLT1G

COLLECTOR

L9013SLT3G

S-L9013SLT3G

13S

10000/Tape&Reel

MAXIMUM RATINGS

Rating

BASE

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

EMITTER

Collector-Base Voltage

Emitter-Base Voltage

Collector current-continuoun

THERMAL CHARATEERISTICS

500

mAdc

Max

225

Characteristic

Symbol

Unit

Total Device Dissipation FR-5 Board, (1)

P_D

T_A=25^oC

Derate above 25^oC

1.8

556

mW/^oC

Thermal Resistance, Junction to Ambient

^oC/W

q JA

Total Device Dissipation

P_D

Alumina Substrate, (2) TA=25 ^oC

300

2.4

417

mW/^oC

^oC/W

^oC

Derate above 25^oC

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

qJA

Tj ,Tstg

-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

1/3

Rev :01.06.2014

www.leiditech.com

L9013PLT1G

Series

S-L9013PLT1G

Series

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC=1.0mA)

V(BR)CEO

V(BR)EBO

V(BR)CBO

Emitter-Base Breakdown Voltage

(IE=100mA)

Collector-Base Breakdown Voltage

(IC=100mA)

Collector Cutoff Current (VCB=35V)

Emitter Cutoff Current (VEB=4V)

ICBO

IEBO

150

ON CHARACTERISTICS

DC Current Gain

(IC=50mA, VCE=1V)

Collector-Emitter Saturation Voltage

(IC=500mA,IB=50mA)

Hfe

100

600

0.6

VCE(S)

NOTE:

HFE

100~200

150~300

200~400

300~600

2/3

Rev :01.06.2014

www.leiditech.com

L9013PLT1G

Series

S-L9013PLT1G

Series

SOT-23

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MAX

MILLIMETERS

DIM

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

Shanghai Leiditech Electronic Co.,Ltd

Email: sale1@leiditech.com

Tel : +86- 021 50828806

Fax : +86- 021 50477059

3/3

Rev :01.06.2014

www.leiditech.com

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