S-L9013RLT1G [LEIDITECH]
We declare that the material of product compliance with RoHS requirements;型号: | S-L9013RLT1G |
厂家: | Leiditech |
描述: | We declare that the material of product compliance with RoHS requirements |
文件: | 总3页 (文件大小:456K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
L9013PLT1G
Series
S-L9013PLT1G
Series
NPN Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
Dimensions SOT-23
Pin Configuration
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L9013PLT1G
S-L9013PLT1G
13P
3000/Tape&Reel
L9013PLT3G
13P
13Q
10000/Tape&Reel
3000/Tape&Reel
S-L9013PLT3G
L9013QLT1G
S-L9013QLT1G
L9013QLT3G
13Q
13R
10000/Tape&Reel
3000/Tape&Reel
S-L9013QLT3G
L9013RLT1G
S-L9013RLT1G
L9013RLT3G
13R
13S
10000/Tape&Reel
3000/Tape&Reel
S-L9013RLT3G
L9013SLT1G
S-L9013SLT1G
3
COLLECTOR
L9013SLT3G
S-L9013SLT3G
13S
10000/Tape&Reel
MAXIMUM RATINGS
Rating
1
BASE
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
20
V
2
EMITTER
Collector-Base Voltage
Emitter-Base Voltage
40
5
V
V
Collector current-continuoun
THERMAL CHARATEERISTICS
500
mAdc
Max
225
Characteristic
Symbol
Unit
Total Device Dissipation FR-5 Board, (1)
PD
TA=25oC
mW
Derate above 25oC
1.8
556
mW/oC
Thermal Resistance, Junction to Ambient
R
oC/W
q JA
Total Device Dissipation
PD
Alumina Substrate, (2) TA=25 oC
300
2.4
417
mW
mW/oC
oC/W
oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
qJA
Tj ,Tstg
-55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1/3
Rev :01.06.2014
www.leiditech.com
L9013PLT1G
Series
S-L9013PLT1G
Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
V(BR)CEO
V(BR)EBO
V(BR)CBO
20
-
-
-
-
-
-
-
V
V
V
Emitter-Base Breakdown Voltage
(IE=100mA)
Collector-Base Breakdown Voltage
(IC=100mA)
Collector Cutoff Current (VCB=35V)
Emitter Cutoff Current (VEB=4V)
5
40
ICBO
IEBO
-
150
150
nA
nA
ON CHARACTERISTICS
DC Current Gain
(IC=50mA, VCE=1V)
Collector-Emitter Saturation Voltage
(IC=500mA,IB=50mA)
Hfe
100
-
-
-
600
0.6
VCE(S)
V
NOTE:
*
P
Q
R
S
HFE
100~200
150~300
200~400
300~600
2/3
Rev :01.06.2014
www.leiditech.com
L9013PLT1G
Series
S-L9013PLT1G
Series
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
3/3
Rev :01.06.2014
www.leiditech.com
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