S-L9015QLT3G [LEIDITECH]

PNP Silicon;


型号：	S-L9015QLT3G
厂家：	Leiditech
描述：	PNP Silicon
文件：	总4页 (文件大小：422K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

L9015QLT1G

Series

S-L9015QLT1G

Series

PNP Silicon

FEATURE

Dimensions SOT-23

ƽComplementary to L9014.

We declare that the material of product compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

Pin Configuration

L9015QLT1G

S-L9015QLT1G

15Q

3000/Tape&Reel

L9015QLT3G

15Q

15R

10000/Tape&Reel

3000/Tape&Reel

COLLECTOR

S-L9015QLT3G

L9015RLT1G

S-L9015RLT1G

L9015RLT3G

15R

15S

10000/Tape&Reel

3000/Tape&Reel

S-L9015RLT3G

L9015SLT1G

S-L9015SLT1G

BASE

EMITTER

L9015SLT3G

S-L9015SLT3G

15S

10000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

-45

Collector-Base Voltage

Emitter-Base Voltage

-50

-5

Collector current-continuoun

-100

THERMAL CHARATEERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board.(1)

P_D

T_A=25^oC

225

Derate above 25^oC

1.8

mW/^oC

^oC/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_JA

P_D

556

Alumina Substrate, (2) TA=25 ^oC

300

Derate above 25^oC

2.4

mW/^oC

^oC/W

Thermal Resistance, Junction to Ambient

R_JA

417

Junction and Storage Temperature

T_J,T_stg

-55 to +150

^oC

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

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Rev :01.06.2014

www.leiditech.com

L9015QLT1G

Series

S-L9015QLT1G

Series

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)

OFF CHARACTERISTICS

Characteristic

Collector-Emitter Breakdown Voltage

(I_C=-1.0mA)

Symbol

Min

Typ

Max

Unit

V(BR)_CEO

-45

Emitter-Base Breakdown Voltage

(I_E=-100µA)

V(BR)_EBO

V(BR)_CBO

I _CBO

-5

Collector-Base Breakdown Voltage

(I_C=-100µA)

-50

Collector Cutoff Current (V_CB=-40V)

Emitter Cutoff Current (V_EB=-3V)

-100

EBO

ON CHARACTERISTICS

DC Current Gain

(I_C=-1mA, V =-5V)

H_FE

150

600

-0.3

Collector-Emitter Saturation Voltage

(I_C=-100mA,I_B=-5mA)

V_CE

NOTE:

H_FE

150~300

200~400

300~600

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Rev :01.06.2014

www.leiditech.com

L9015QLT1G

Series

S-L9015QLT1G

Series

STATIC CHARACTERISTIC

BASE-EMITTER VOLTAGE

DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT

BASE-EMITTER SATURATION VOLTAGE

COLLECTOR OUTPUT CAPACITANCE

COLLECTOR-EMITTER SATURATION VOLTAGE

3/4

Rev :01.06.2014

www.leiditech.com

L9015QLT1G

Series

S-L9015QLT1G

Series

SOT-23

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MAX

MILLIMETERS

DIM

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

Shanghai Leiditech Electronic Co.,Ltd

Email: sale1@leiditech.com

Tel : +86- 021 50828806

Fax : +86- 021 50477059

4/4

Rev :01.06.2014

www.leiditech.com

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