S-L9015RLT1G [LEIDITECH]
PNP Silicon;型号: | S-L9015RLT1G |
厂家: | Leiditech |
描述: | PNP Silicon |
文件: | 总4页 (文件大小:422K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
L9015QLT1G
Series
S-L9015QLT1G
Series
PNP Silicon
FEATURE
Dimensions SOT-23
ƽComplementary to L9014.
ƽ
We declare that the material of product compliance with RoHS requirements.
ƽ
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
Pin Configuration
L9015QLT1G
S-L9015QLT1G
15Q
3000/Tape&Reel
L9015QLT3G
15Q
15R
10000/Tape&Reel
3000/Tape&Reel
COLLECTOR
3
S-L9015QLT3G
L9015RLT1G
S-L9015RLT1G
L9015RLT3G
15R
15S
10000/Tape&Reel
3000/Tape&Reel
S-L9015RLT3G
1
L9015SLT1G
S-L9015SLT1G
BASE
2
EMITTER
L9015SLT3G
S-L9015SLT3G
15S
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
-45
V
V
Collector-Base Voltage
Emitter-Base Voltage
-50
-5
V
Collector current-continuoun
-100
mA
THERMAL CHARATEERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board.(1)
PD
TA=25oC
225
mW
Derate above 25oC
1.8
mW/oC
oC/W
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RJA
PD
556
Alumina Substrate, (2) TA=25 oC
300
mW
Derate above 25oC
2.4
mW/oC
oC/W
Thermal Resistance, Junction to Ambient
RJA
417
Junction and Storage Temperature
TJ ,Tstg
-55 to +150
oC
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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Rev :01.06.2014
www.leiditech.com
L9015QLT1G
Series
S-L9015QLT1G
Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Symbol
Min
Typ
Max
Unit
V(BR)CEO
-45
-
-
V
Emitter-Base Breakdown Voltage
(IE=-100µA)
V(BR)EBO
V(BR)CBO
I CBO
-5
-
-
-
-
V
V
Collector-Base Breakdown Voltage
(IC=-100µA)
-50
Collector Cutoff Current (VCB=-40V)
Emitter Cutoff Current (VEB=-3V)
-
-
-100
-100
nA
nA
I
EBO
ON CHARACTERISTICS
DC Current Gain
(IC=-1mA, V =-5V)
HFE
150
-
-
-
600
-0.3
CE
Collector-Emitter Saturation Voltage
(IC=-100mA,IB=-5mA)
VCE
V
NOTE:
*
Q
R
S
HFE
150~300
200~400
300~600
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Rev :01.06.2014
www.leiditech.com
L9015QLT1G
Series
S-L9015QLT1G
Series
STATIC CHARACTERISTIC
BASE-EMITTER VOLTAGE
DC CURRENT GAIN
CURRENT GAIN-BANDWIDTH PRODUCT
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR OUTPUT CAPACITANCE
COLLECTOR-EMITTER SATURATION VOLTAGE
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Rev :01.06.2014
www.leiditech.com
L9015QLT1G
Series
S-L9015QLT1G
Series
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
4/4
Rev :01.06.2014
www.leiditech.com
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