S-LBC858BLT3G [LEIDITECH]

General Purpose Transistors PNP Silicon;


型号：	S-LBC858BLT3G
厂家：	Leiditech
描述：	General Purpose Transistors PNP Silicon
文件：	总7页 (文件大小：666K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LBC857CLT1G

Series

S-LBC857CLT1G

Series

General Purpose Transistors

PNP Silicon

• ^{Moisture Sensitivity Level: 1}

SOT–23

• ^{ESD Rating – Human Body Model: >4000 V}

ESD Rating – Machine Model: >400 V

•

We declare that the material of product compliance with

RoHS requirements.

• ^{S- Prefix for Automotive and Other Applications Requiring}

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

LBC856

LBC857

CEO

CBO

EBO

–65

–45

–30

COLLECTOR

LBC858, LBC859

Collector-Base Voltage

LBC856

LBC857

–80

–50

–30

BASE

LBC858, LBC859

Emitter–Base Voltage

–5.0

EMITTER

Collector Current – Continuous

THERMAL CHARACTERISTICS

Characteristic

–100

mAdc

MARKING DIAGRAM

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,

(Note 1.) T = 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance,

Junction to Ambient

556

°C/W

qJA

xx= Device Marking

(See Table Below)

Total Device Dissipation Alumina

Substrate, (Note 2.) T = 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,

Junction to Ambient

417

°C/W

qJA

Junction and Storage Temperature

T , T

J stg

–55 to

+150

°C

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

01.06.2015

1/7

Rev :

www.leiditech.com

LBC857CLT1G

Series

S-LBC857CLT1G

Series

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Package

SOT-23

Shipping

LBC856ALT1G,S-LBC856ALT1G

3000/Tape&Reel

LBC856ALT3G,S-LBC856ALT3G

LBC856BLT1G,S-LBC856BLT1G

LBC856BLT3G,S-LBC856BLT3G

LBC857ALT1G,S-LBC857ALT1G

LBC857BLT1G,S-LBC857BLT1G

LBC857BLT3G,S-LBC857BLT3G

LBC857CLT1G,S-LBC857CLT1G

LBC858ALT1G,S-LBC858ALT1G

LBC858BLT1G,S-LBC858BLT1G

LBC858BLT3G,S-LBC858BLT3G

LBC858CLT1G,S-LBC858CLT1G

LBC858CLT3G,S-LBC858CLT3G

LBC859BLT1G,S-LBC859BLT1G

LBC859CLT1G,S-LBC859CLT1G

LBC859CLT3G,S-LBC859CLT3G

SOT-23

10000/Tape&Reel

3000/Tape&Reel

SOT-23

10000/Tape&Reel

3000/Tape&Reel

SOT-23

10000/Tape&Reel

3000/Tape&Reel

SOT-23

10000/Tape&Reel

3000/Tape&Reel

SOT-23

10000/Tape&Reel

3000/Tape&Reel

SOT-23

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

01.06.2015

2/7

Rev :

www.leiditech.com

LBC857CLT1G

Series

S-LBC857CLT1G

Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –10 mA)

LBC856 Series

LBC857 Series

LBC858, LBC859 Series

–65

–45

–30

–

(BR)CEO

Collector–Emitter Breakdown Voltage

LBC856 Series

LBC857 Series

LBC858, LBC859 Series

–80

–50

–30

–

(BR)CES

(BR)CBO

(BR)EBO

(I = –10 µA, V

C EB

= 0)

Collector–Base Breakdown Voltage

(I = –10 mA)

LBC856 Series

LBC857 Series

LBC858, LBC859 Series

–80

–50

–30

–

Emitter–Base Breakdown Voltage

(I = –1.0 mA)

LBC856 Series

LBC857 Series

LBC858, LBC859 Series

–5.0

–

Collector Cutoff Current (V

= –30 V)

= –30 V, T = 150°C)

–

–15

–4.0

µA

CBO

ON CHARACTERISTICS

DC Current Gain

–

(I = –2.0 mA, V

C CE

= –5.0 V) LBC856A, LBC857A, LBC858A

LBC856B, LBC857B, LBC858B, LBC859B

LBC857C, LBC858C, LBC859C

125

220

420

180

290

520

250

475

800

Collector–Emitter Saturation Voltage

(I = –10 mA, I = –0.5 mA)

CE(sat)

–

–0.3

–0.65

(I = –100 mA, I = –5.0 mA)

Base–Emitter Saturation Voltage

(I = –10 mA, I = –0.5 mA)

BE(sat)

–

–0.7

–0.9

–

(I = –100 mA, I = –5.0 mA)

Base–Emitter On Voltage

BE(on)

(I = –2.0 mA, V

(I = –10 mA, V

= –5.0 V)

–0.6

–

–0.75

–0.82

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

100

–

MHz

(I = –10 mA, V

C CE

= –5.0 Vdc, f = 100 MHz)

Output Capacitance

(V = –10 V, f = 1.0 MHz)

4.5

Noise Figure

(I = –0.2 mA, V

= –5.0 Vdc, R = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

LBC856, LBC857, LBC858 Series

LBC859 Series

–

4.0

01.06.2015

3/7

Rev :

www.leiditech.com

LBC857CLT1G

Series

S-LBC857CLT1G

Series

LBC857/ LBC858

–1.0

–0.9

–0.8

–0.7

–0.6

–0.5

–0.4

–0.3

–0.2

–0.1

2.0

1.5

T_A= 25°C

V_CE= –10 V

_A= 25°C

V _BE(sat)@ I _C/I _B=10

1.0

0.7

_BE(on)@ V _CE= –10 V

0.5

0.3

0.2

V_CE(sat)@ I_C/I_B= 10

–0.2

–0.5

–1.0

–2.0

–5.0

–10

–20

–50

–100

–200

–0.1

–0.2

–0.5

–1.0

–2.0

–5.0

–10

–20

–50 –100

I_C, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

I_C, COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” Voltages

–2.0

–1.6

–1.2

–0.8

–0.4

1.0

_A= 25°C

–55°C to +125°C

1.2

1.6

2.0

2.4

2.8

I _C

I_C= –200 mA

I_C= –100 mA

I _C= –50 mA

–10 mA

I_C= –20 mA

–0.02

–0.1

–1.0

–10

–20

–0.2

–1.0

–10

–100

I_B, BASE CURRENT (mA)

I_C, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region

Figure 4. Base–Emitter Temperature Coefficient

400

300

200

10.0

C _ib

7.0

5.0

T_A=25°C

100

V _CE=–10V

T _A= 25°C

C _ob

3.0

2.0

1.0

–0.4

–0.6

–1.0

–2.0

–4.0 –6.0

–10

–20 –30 –40

–0.5

–1.0

–2.0 –3.0

–5.0

–10

–20 –30

–50

I _C, COLLECTOR CURRENT (mAdc)

V _R, REVERSE VOLTAGE (VOLTS)

Figure 6. Current–Gain – Bandwidth Product

Figure 5. Capacitances

01.06.2015

4/7

Rev :

www.leiditech.com

LBC857CLT1G

Series

S-LBC857CLT1G

Series

LBC856

–1.0

–0.8

–0.6

–0.4

–0.2

T_J= 25°C

V_BE(sat)@ I_C/I_B= 10

V_CE= –5.0V

T_A= 25°C

2.0

1.0

V_BE@V_CE= –5.0 V

0.5

0.2

V_CE(sat)@ I _C/I_B= 10

–0.1–0.2

–1.0–2.0 –5.0–10–20 –50–100–200

–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200

I_C, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

Figure 7. DC Current Gain

–2.0

–1.6

–1.2

–0.8

–0.4

–1.0

–1.4

–1.8

–2.2

–2.6

–3.0

–200mA

–100mA

I _C

–20mA

–50mA

–10 mA

_VBfor V _BE

–55°C to 125°C

T_J= 25°C

–0.02

–0.05 –0.1 –0.2

–0.5 –1.0 –2.0

–5.0 –10 –20

–0.2

–0.5 –1.0 –2.0

–5.0 –10 –20

–50 –100 –200

I_B, BASE CURRENT (mA)

I_C, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region

Figure 10. Base–Emitter Temperature Coefficient

V_CE= –5.0 V

500

T_J= 25°C

C _ib

200

100

8.0

6.0

4.0

C _ob

2.0

–0.1–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20

–50 –100

–1.0

–10

–100

V_R, REVERSE VOLTAGE (VOLTS)

I_C, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. Current–Gain – Bandwidth Product

01.06.2015

5/7

Rev :

www.leiditech.com

LBC857CLT1G

Series

S-LBC857CLT1G

Series

1.0

0.7

0.5

D=0.5

0.2

0.3

0.2

SINGLE PULSE

0.05

Z _θJC(t) = r(t) R _θJC

0.1

R _θJC= 83.3°C/W MAX

P_(pk)

_θJA(t) = r(t) R _θJA

SINGLE PULSE

0.07

0.05

R _θJA= 200°C/W MAX

t₁

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t ₁

t ₂

DUTY CYCLE, D = t₁/t ₂

0.03

0.02

T _J(pk)– T _C= P _(pk)R_θJC(t)

0.01

0.1

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0k 2.0k

5.0k

10k

t, TIME (ms)

Figure 13. Thermal Response

–200

The safe operating area curves indicate I _C–V _CElimits of the

transistor that must be observed for reliable operation. Collector

load lines for specific circuits must fall below the limits indicated by

the applicable curve.

3 ms

–100

–50

T_J= 25°C

T_A= 25°C

The data of Figure 14 is based upon T_J(pk)= 150°C; T _Cor T_A

is variable depending upon conditions. Pulse curves are valid for

BC558

BC557

BC556

duty cycles to 10% provided T_J(pk)< 150°C. T_J(pk)may be calcu-

lated from the data in Figure 13. At high case or ambient

temperatures, thermal limitations will reduce the power that can

be handled to values less than the limitations imposed by the sec-

ondary breakdown.

–10

–5.0

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

–2.0

–1.0

–0.5

–10

–30 –45 –65 –100

V _CE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

01.06.2015

6/7

Rev :

www.leiditech.com

LBC857CLT1G

Series

S-LBC857CLT1G

Series

SOT-23

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MAX

MILLIMETERS

DIM

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

Shanghai Leiditech Electronic Co.,Ltd

Email: sale1@leiditech.com

Tel : +86- 021 50828806

Fax : +86- 021 50477059

01.06.2015

7/7

Rev :

www.leiditech.com

相关型号：