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S-LH8050PLT1G [LEIDITECH]

General Purpose Transistors NPN Silicon;
S-LH8050PLT1G
型号： S-LH8050PLT1G
厂家： Leiditech    Leiditech
描述：

General Purpose Transistors NPN Silicon
文件： 总4页 (文件大小：482K)
中文：  中文翻译
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LH8050PLTIG Series  
S-LH8050PLTIG Series  
General Purpose Transistors  
NPN Silicon  
FEATURE  
ƽHigh current capacity in compact package.  
IC =1.5A.  
3
ƽEpitaxial planar type.  
ƽNPN complement: LH8050  
ƽPb-Free Package is available.  
1
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and  
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
2
SOT–23  
DEVICE MARKING AND ORDERING INFORMATION  
Shipping  
Device  
Marking  
COLLECTOR  
3
3000/Tape&Reel  
(S-)LH8050PLT1G  
KEO  
KEO  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
(S-)LH8050PLT3G  
(S-)LH8050QLT1G  
(S-)LH8050QLT3G  
1
BASE  
KEY  
KEY  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
VCEO  
VCBO  
VEBO  
50  
50  
V
V
6
V
Collector Current-continuoun  
IC  
1500  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
225  
Unit  
mW  
°C  
Total Dissipation Power  
PD  
Junction and Storage Temperature  
T
j,  
T
S
t
g
-55 to +150  
1/4  
Rev :01.06.2018  
www.leiditech.com  
LH8050PLTIG Series  
S-LH8050PLTIG Series  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Collector-Emitter Breakdown Voltage  
–
–
V(BR)CEO  
50  
V
(IC=2.0mA,IB=0)  
Emitter-Base Breakdown Voltage  
(IE=100µΑ,IC =0)  
–
–
V(BR)EBO  
6
V
Collector-Base Breakdown Voltage  
(IC=100µΑ,IE =0)  
–
–
–
V(BR)CBO  
50  
–
V
Collector Cutoff Current (VCB=35V,IE=0)  
ICBO  
100  
nA  
Emitter Cutoff Current (VEB=6V,IC=0)  
IEBO  
VBE  
–
–
–
100  
1
nA  
V
Base-Emitter Voltage (VCE=1V,IC=10mA)  
0.66  
DC Current Gain  
*
IC=100mA,VCE=1V  
DC Current Gain  
hFE  
100  
-
-
320  
-
IC=800mA,VCE=1V  
hFE  
40  
Collector-Emitter Saturation Voltage  
(IC=800mA IB=80mA)  
VCE(S)  
-
-
0.5  
V
NOTE :  
*
P
Q
hFE  
100~200  
160~320  
2/4  
Rev :01.06.2018  
www.leiditech.com  
LH8050PLTIG Series  
S-LH8050PLTIG Series  
(T =25°C)  
A
Electrical Characteristic Curves  
3/4  
Rev :01.06.2018  
www.leiditech.com  
LH8050PLTIG Series  
S-LH8050PLTIG Series  
SOT-23  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M,1982  
A
L
2. CONTROLLING DIMENSION: INCH.  
3
INCHES  
MAX  
MILLIMETERS  
DIM  
S
B
MIN  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
1
2
A
B
C
D
G
H
J
0.1102  
0.0472  
0.0350  
0.0150  
0.0701  
0.0005  
0.0034  
0.0140  
0.0350  
0.0830  
0.0177  
0.1197  
0.0551  
0.0440  
0.0200  
0.0807  
0.0040  
0.0070  
0.0285  
0.0401  
0.1039  
0.0236  
V
G
C
K
L
H
J
D
K
S
V
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
Shanghai Leiditech Electronic Co.,Ltd  
Email: sale1@leiditech.com  
Tel : +86- 021 50828806  
Fax : +86- 021 50477059  
4/4  
Rev :01.06.2018  
www.leiditech.com  

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