S-LM1MA141WKT1G [LEIDITECH]

Common Cathode Silicon Dual Switching Diode;
S-LM1MA141WKT1G
型号: S-LM1MA141WKT1G
厂家: Leiditech    Leiditech
描述:

Common Cathode Silicon Dual Switching Diode

光电二极管
文件: 总4页 (文件大小:554K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LM1MA141WKT1G, S-LM1MA141WKT1G  
LM1MA142WKT1G, S-LM1MA142WKT1G  
Common Cathode Silicon  
Dual Switching Diode  
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for  
use in ultra high speed switching applications. This device is housed in the  
SC-70 package which is designed for low power surface mount applications.  
SC–70/SOT–323 PACKAGE  
COMMON CATHODE  
DUAL SWITCHING DIODE  
40/80 V–100 mA  
z• Fast trr, < 3.0 ns  
• Low C , < 2.0 pF  
z
D
We declare that the material of product  
z
SURFACE MOUNT  
compliance with RoHS requirements.  
S- Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
z
3
Qualified and PPAP Capable.  
MAXIMUM RATINGS (TA = 25°C)  
1
Rating  
Symbol Value  
Unit  
2
Reverse Voltage  
LM1MA141WKT1G VR  
LM1MA142WKT1G  
M1MA141WKT1G  
40  
80  
Vdc  
SC – 70  
Peak Reverse Voltage  
Forward Current  
L
V
RM  
40  
Vdc  
LM1MA142WKT1  
Single  
80  
G
IF  
100  
150  
225  
340  
500  
750  
mAdc  
mAdc  
mAdc  
Dual  
Peak Forward Current  
Peak Forward Surge Current  
Single  
IFM  
Dual  
(1)  
Single  
IFSM  
Dual  
Marking Symbol  
MTX  
Type No.141WK142WK  
THERMAL CHARACTERISTICS  
Symbol  
MT  
MU  
Rating  
Symbol  
PD  
Max  
150  
150  
Unit  
mW  
°C  
The “X” represents a smaller alpha digit Date  
Code. The Date Code indicates the actual month  
in which the part was manufactured.  
Power Dissipation  
Junction Temperature  
Storage Temperature  
TJ  
Tstg  
–55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Condition  
Min  
Max  
0.1  
0.1  
1.2  
Unit  
G
Reverse Voltage Leakage Current LM1MA141WKT1  
LM1MA142WKT1  
IR  
VR = 35 V  
VR = 75 V  
µAdc  
G
Forward Voltage  
VF  
VR  
IF = 100 mA  
IR = 100 µA  
Vdc  
Vdc  
G
G
Reverse Breakdown Voltage  
LM1MA141WKT1  
40  
80  
LM1MA142WKT1  
Diode Capacitance  
Reverse Recovery  
CD  
VR=0, f=1.0 MHz  
IF=10mA,VR=6.0V  
RL=100,Irr=0.1 IR  
2.0  
3.0  
pF  
ns  
(2)  
Time  
trr  
1. t = 1 SEC  
2. trr Test Circuit  
1/4  
Rev :01.06.2017  
www.leiditech.com  
LM1MA141WKT1G, S-LM1MA141WKT1G  
LM1MA142WKT1G, S-LM1MA142WKT1G  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
LM1MA141WKT1G  
S-LM1MA141WKT1G  
MT  
MT  
SOT-323/SC-70  
SOT-323/SC-70  
3000/Tape&Reel  
10000/Tape&Reel  
LM1MA141WKT3G  
S- LM1MA141WKT3G  
LM1MA142WKT1G  
MU  
MU  
SOT-323/SC-70  
SOT-323/SC-70  
3000/Tape&Reel  
10000/Tape&Reel  
S-LM1MA142WKT1G  
LM1MA142WKT3G  
S-LM1MA142WKT3G  
2/4  
Rev :01.06.2017  
www.leiditech.com  
LM1MA141WKT1G, S-LM1MA141WKT1G  
LM1MA142WKT1G, S-LM1MA142WKT1G  
RECOVERY TIME EQUIVALENT TEST CIRCUIT  
INPUT PULSE  
OUTPUT PULSE  
VF, FORWARD VOLTAGE (VOLTS)  
VR, REVERSE VOLTAGE (VOLTS)  
Figure 2. Reverse Current  
Figure 1. Forward Voltage  
VR, REVERSE VOLTAGE (VOLTS)  
Figure 3. Diode Capacitance  
3/4  
Rev :01.06.2017  
www.leiditech.com  
LM1MA141WKT1G, S-LM1MA141WKT1G  
LM1MA142WKT1G, S-LM1MA142WKT1G  
SC 70  
NOTES:  
1. DIMENSION  
ING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
INCHES MILLIMETERS  
A
DIM  
MIN  
MAX  
MIN  
1.80  
1.15  
0.80  
0.30  
MAX  
2.20  
1.35  
1.00  
0.40  
L
A
B
C
D
0.071 0.087  
0.045 0.053  
0.032 0.040  
0.012 0.016  
3
B
S
1
2
G
H
J
K
L
0.047 0.055  
0.000 0.004  
0.004 0.010  
0.017 REF  
0.026 BSC  
0.028 REF  
1.20  
0.00  
0.10  
0.425 REF  
0.650 BSC  
0.700 REF  
1.40  
0.10  
0.25  
D
G
N
S
J
N
C
0.079 0.095  
2.00  
2.40  
0.05 (0.002)  
K
H
0.025  
0.65  
0.025  
0.65  
0.075  
1.9  
0.035  
0.9  
0.028  
0.7  
inches  
mm  
Shanghai Leiditech Electronic Co.,Ltd  
Email: sale1@leiditech.com  
Tel : +86- 021 50828806  
Fax : +86- 021 50477059  
4/4  
Rev :01.06.2017  
www.leiditech.com  

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