S-LMBTA55LT1G [LEIDITECH]
Driver Transistors PNP Silicon;
| 型号： | S-LMBTA55LT1G |
| 厂家： | 
Leiditech |
| 描述： | Driver Transistors PNP Silicon |
| 文件： | 总3页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMBTA55LT1G
DriverTransistors
PNP Silicon
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS
Value
3
Rating
Symbol
V CEO
V CBO
V EBO
I C
LMBTA55
LMBTA56
Unit
Vdc
1
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
–60
–80
2
–60
–80
Vdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
–4.0
–500
Vdc
mAdc
3
COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
1
Symbol
Max
Unit
BASE
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
225
mW
2
EMITTER
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
P D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
T J , T stg
–55 to +150
DEVICE MARKING
(S-)LMBTA55LT1G = 2H; (S-)LMBTA56LT1G = 2GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B= 0 )
V (BR)CEO
Vdc
LMBTA55
LMBTA56
–60
–80
—
—
Emitter–Base Breakdown Voltage
V (BR)EBO
–4.0
—
—
Vdc
(I E = –100 µAdc, I C = 0 )
Collector Cutoff Current
( V CE = –60Vdc, I B = 0)
Collector Cutoff Current
( V CB = –60Vdc, I E= 0)
I CES
I CBO
–0.1
µAdc
µAdc
LMBTA55
LMBTA56
—
—
–0.1
–0.1
( V CB = –80Vdc, I E= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<300 µs, Duty Cycle
<2.0%.
1/3
Rev :01.06.2018
www.leiditech.com
LMBTA55LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
—
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –100mAdc, V CE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –100mAdc, I B = –10mAdc)
Base–Emitter On Voltage
100
100
—
—
—
VCE(sat)
–0.25
Vdc
Vdc
V BE(on)
—
–1.2
—
(I C = –100mAdc, V CE = –1.0Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product(4)
f T
50
MHz
(V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz)
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
ORDERING INFORMATION
Device
Marking
Shipping
(S-)LMBTA55LT1G
(S-)LMBTA56LT1G
(S-)LMBTA55LT3G
(S-)LMBTA56LT3G
2H
2GM
2H
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
2GM
TURN−ON TIME
TURN−OFF TIME
V
V
CC
+V
CC
−1.0 V
BB
+40 V
+40 V
5.0 ms
100
R
100
R
L
L
OUTPUT
OUTPUT
+10 V
0
V
in
R
V
in
R
B
B
t = 3.0 ns
r
* C t 6.0 pF
S
* C t 6.0 pF
S
5.0 mF
5.0 mF
100
100
5.0 ms
t = 3.0 ns
r
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2/3
Rev :01.06.2018
www.leiditech.com
LMBTA55LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
3/3
Rev :01.06.2018
www.leiditech.com
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