10A05T [LGE]

Plastic Silicon Rectifiers; 塑料硅整流
10A05T
型号: 10A05T
厂家: LGE    LGE
描述:

Plastic Silicon Rectifiers
塑料硅整流

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10A05T-10A100T  
Plastic Silicon Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 10.0 A  
TO-220AC  
Features  
4.5± 0.2  
10.2± 0.2  
Low cost  
Diffused junction  
1.4± 0.2  
φ 3.8± 0.15  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned witn Freon,Alcohol,lsopropanol  
PIN  
2
1
and similar solvents  
2.6± 0.2  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
0.9± 0.1  
0.5± 0.1  
Case:JEDEC TO-220AC,molded plastic  
5.0± 0.1  
Polarity: Color band denotes cathode  
Weight: 0.064 ounces,1.96 grams  
Mounting position: Any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
10A05T 10A10T 10A20T 10A40T 10A60T 10A80T 10A100T UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forw ard rectified current  
A
10  
IF(AV)  
9.5mm lead length,  
@TC=50  
Peak forw ard surge current  
IFSM  
A
V
8.3ms single half-sine-w ave  
400  
1.0  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
VF  
@ 10 A  
Maximum reverse current  
@TA=25  
10  
100  
IR  
µA  
at rated DC blocking voltage @TA=100  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
120  
CJ  
10  
Rθ  
/W  
JC  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance f rom junction to case.  
http://www.luguang.cn  
mail:lge@luguang.cn  
10A05T-10A100T  
Plastic Silicon Rectifiers  
Ratings AND Charactieristic Curves  
FIG.1 -- FORWARD DERATING CURVE  
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS  
20  
10  
4
2
12  
10  
8
1.0  
0.4  
0.2  
6
S
i n  
a
e
g
lf  
s
le  
W
P
a
iv  
iv  
h a s e  
v e 6 0 H Z  
H
R
I n  
i s  
t
e
o
r
0.1  
d
u
c
t
e
L
o
a d  
0.06  
4
TJ=25  
0.04  
0
2 5  
5 0 7 5  
1 0 0 1 2 5 1 5 0 1 7 5  
Pulse width=300us  
0.02  
0.01  
0.3 0.4  
0.6 0.8  
1.0  
1.3  
CASE TEMPERATURE,  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
FIG.3 --MAXIMUM NON-REPETITIVEFORWARD  
SURGE CURRENT  
FIG.4 -- TYPICAL JUNCTION CAPACITANCE  
400  
200  
TJ=125  
8.3ms Single Half  
f=1MHz  
TJ=25  
300  
Sine-Wave  
100  
200  
100  
0
10  
.1  
.2 .4  
1.0  
2
4
10 20 40  
100  
1
2
4
8
10  
20  
40 60 80 100  
NUMBER OF CYCLES AT60Hz  
REVERSE VOLTAGE, VOLTS  
http://www.luguang.cn  
mail:lge@luguang.cn  

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