1N4769 [LGE]
暂无描述;
| 型号： | 1N4769 |
| 厂家： | 
LGE |
| 描述： | 暂无描述 测试 二极管 |
| 文件： | 总3页 (文件大小：1744K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4728-1N4764
Zener Diodes
POWER DISSIPATION: 1.0 W
DO-41
Features
Silicon planar power zener diodes
For use in stabilizing and clipping circuits with high
power rating.
Standard zener voltage tolerance is ±10%. Add
suffix "A" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
Mechanical Data
Case:DO-41
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode band
Marking: type number
Approx. weight: 0.35 grams.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener current (see Table "Characteristics")
Pow er dissipation @ Tamb 50
Z-current
1.01)
PV/VZ
PDiss
W
IZ
mA
Junction temperature
TJ
200
Storage temperature range
Junction ambient I=9.5mm(3/8 ), TL=constant
Ts
-55---+200
100
RThJA
K/W
SYMBOL
VF
MIN
TYP
MAX
1.2
UNIT
Forw ard voltage at IF=200mA
V
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
1N4728-1N4764
Zener Diodes
(TA=25
)
ELECTRICAL CHARACTERISTICS
Max surge
current
8.3ms
Maximum
Nominal
Test
Maximum reverse
leakage current
Maximum dynamic impedance
regulator
zener
current
IZT
current 2)
voltage 1)
Type
IR@Tamb
=25
IZM @Tamb
=50
Vz@IZT
ZZT@I
ZZK@IZK
IZK
IR
@VR
ZT
(mA)
(V)
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
(mA)
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
(Ω)
10
10
9
9
8
7
5
2
3.5
4.0
4.5
5.0
7
(Ω)
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
(μA)
100
100
50
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
79.0
(mA)
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
(mA)
276
252
234
217
193
178
462
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
25
23
22
19
18
16
14
13
12
11
10
9
1N4728
1N4729
1N4730
1N4731
1N4732
1N4733
1N4734
1N4735
1N4736
1N4737
1N4738
1N4739
1N4740
1N4741
1N4742
1N4743
1N4744
1N4745
1N4746
1N4747
1N4748
1N4749
1N4750
1N4751
1N4752
1N4753
1N4754
1N4755
1N4756
1N4757
1N4758
1N4759
1N4760
1N4761
1N4762
1N4763
1N4764
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
90
80
70
65
60
55
50
45
1)Based on dc_measurement at theral equilibrium while maitaining the lead temperature (TL) at 30 +1 ,9.5mm(3/8")f rom the Diode body .
2)Valid prov ided that electrodes at a distance of 10 mm f orm case kept at ambient temperature.
*)Additionnal measurement of v oltage gruup 9v 1 to 75 at 95% VZMIN
35nA at TJ25
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
1N4728-1N4764
Zener Diodes
Ratings AND Charactieristic Curves
FIG.1 -- BREAKDOWN CHARACTERISTICS
mA
5
10
15
20
25
30 V
100
80
IZ
60
40
20
0
VZ
FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
W
1.0
0.8
Ptot
0.6
0.4
0.2
0
℃
0
100
200
Tamb
CARTON
SPQ/PCS
CARTON
SIZE/CM
CARTON
GW/KG
CARTON
NW/KG
PACKAGE
DO-41
SPQ/PCS
5000/AMMO
50000
42X28X31
14.00
12.00
http://www.lgesemi.com
mail:lge@lgesemi.com
Revision:20170701-P1
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