1N5711 [LGE]
Small Signal Schottky Diodes; 小信号肖特基二极管
| 型号： | 1N5711 |
| 厂家： | 
LGE |
| 描述： | Small Signal Schottky Diodes |
| 文件： | 总2页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5711
Small Signal Schottky Diodes
VOLTAGE RANGE: 70V
POWER DISSIPATION: 400 mW
DO - 35(GLASS)
Features
For general purpose applications
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
Mechanical Data
Case:JEDEC DO--35,glass case
Dimensions in millimeters
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Value
70.0
UNITS
Peak reverse voltage
V
zmW
A
VRRM
Ptot
4001)
2.0
Pow er dissipation (Infinite Heat Sink)
Maximum single cycle surge 10 s square w ave
Junction tenperature
IFSM
TJ
125
Storage temperature range
c-55 ---+ 150
TSTG
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Symbols
Typ.
Max.
Min.
70.0
UNITS
Reverse breakdow n voltage
@ IR=10
A
VR
IR
V
Leakage current
@ VR=50V
IF=1mA
IF=15mA
Junction capacitance @ VR=0V,f=1MHz
200.0
0.41
1.0
2
anA
Forw ard voltage drop
@
VF
V
CJ
trr
pF
Reverse recovery time @ IF=IR=5mA,recover to 0.1 IR
Termal resistance junction to ambient air
1
ns
0.3
Rθ
/mW
JA
http://www.luguang.cn
mail:lge@luguang.cn
1N5711
Small Signal Schottky Diodes
Ratings AND Charactieristic Curves
FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD.
FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF
XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE XXXXX COMBINATION SCHOTTKY BARRIER AND PN
XXXXXXXX-SCHOTTKY BARRIER
XXXXX JUNCTION GUARD RING
mA
10
mA
100
5
2
80
1
IF
IF
60
40
20
0
5
2
0.1
5
2
0
0 .5
1
V
0.01
0
0.5
1
V
VF
VF
FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT
XXXXXXXXXVARIATION TEMPERATURES
FIG.4 -- TYPICAL CAPACITANCE CURVE AS A
XXXXX- JUNCTION OF REVERSE VOLTAGE
pF
2
µ A
150
100
℃
℃
125
5
2
TJ=25
10
100
C
J
IR
5
℃
75
50
2
1
1
5
2
℃
0.1
25
5
2
0
0.01
50 V
0
20
30
40
10
V
50
0
20
30
40
10
VR
VR
http://www.luguang.cn
mail:lge@luguang.cn
相关型号：
1N5711#T25
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MICROSEMI
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