BAS216 [LGE]

Switching Diodes; 开关二极管
BAS216
型号: BAS216
厂家: LGE    LGE
描述:

Switching Diodes
开关二极管

二极管 开关
文件: 总3页 (文件大小:343K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS216  
Switching Diodes  
FEATURES  
„
„
„
Silicon epitaxial planar diode  
SMD chip pattern, available in various dimension included 1206 & 0603  
Leadfree and RoHS compliance components  
MECHANICAL CHARACTERISTICS  
„
„
„
Size: 0805  
Weight: approx. 6mg  
Marking: Cathode terminal  
DIMENSIONS  
Dimension/mm  
0805  
L
W
T
2.0±0.2  
1.25±0.2  
0.85±0.1  
0.45±0.2  
C
THERMAL CHARACTERISTICS  
Parameter at Tamb=25oC  
Symbol  
Unit  
Value  
Junction Temperature  
Thermal Resistance Junction to Ambient air  
Storage Temperature range  
Tj  
RθJA  
Tstg  
oC  
oC/W  
oC  
175  
3751)  
-65 to 175  
1) Valid provided that electrodes are kept at ambient temperature.  
http://www.luguang.cn  
mail:lge@luguang.cn  
BAS216  
Switching Diodes  
ELECTRICAL CHARACTERISTICS  
Parameter at Tamb=25oC  
Symbol  
Unit  
Value  
Reverse Voltage  
Peak Reverse Voltage  
VR  
VRM  
IFM  
V
V
mA  
75  
100  
300  
Forward Continuous Current  
Average rectified current sin half wave  
rectification with resistive load f>=50Hz  
Surge Forward Current at t<1s and Tj=25oC  
Power Dissipation  
IF(AV)  
mA  
1501)  
IFSM  
Ptot  
VF  
IR  
IR  
mA  
mW  
V
500  
4001)  
1.0 MAX  
25 MAX  
5 MAX  
Forward Voltage at IF=10mA  
Leakage Current at VR=20V  
nA  
at VR=75V  
μA  
μA  
pF  
at VR=20V, Tj=150oC  
IR  
Ctot  
50 MAX  
4 MAX  
Capacitance at VF=VR=0V  
Voltage rise when switching ON, tested with  
50mA pulses, tp=0.1µs, rise time <30ns,  
fp=(5-100)kHz  
Vfr  
V
2.5 MAX  
Reverse Recovery Time at IF =10mA to IR=1mA,  
VR=6V, RL=100Ω  
Rectification efficiency at f=100MHz, VRF=2V  
trr  
ns  
%
4 MAX  
ηr  
45 MIN  
1) Valid provided that electrodes are kept at ambient temperature.  
Rectification Efficiency Measurement Circuit  
http://www.luguang.cn  
mail:lge@luguang.cn  
BAS216  
Switching Diodes  
ENVIRONMENTAL CHARACTERISTICS  
Hazardous Substance or Element/ppm  
Product  
BAS216  
Pb  
Cd  
Hg  
Cr6+  
PBB  
PBDE  
<1000  
<1000  
<100  
<1000  
<1000  
<1000  
TEST CHARACTERISTICS  
Test Item  
Test Condition  
Sn bath at 250±5oC for 2±0.5s  
Requirement  
Solderability  
>95% area tin covered  
VF,VZ & IR within spec;  
no mechanical damage  
Resistance to  
Soldering Heat  
Humidity Steady  
State  
Continue Forward  
Operating Life  
Hi-Temperature  
Reverse Bias  
Sn bath at 260±5oC for 10±2s  
At 85oC 85%RH for 1000hrs  
VF,VZ & IR within spec  
VF,VZ & IR within spec  
VF,VZ & IR within spec  
VF,VZ & IR within spec  
At 25oC IF =Io±10% for 1000hrs  
At 150oC VR =0.8VR rated for  
1000hrs  
-55 ±5oC/5min to 150±5oC/5min  
for 10cycles  
Thermal Shock  
VF,VZ & IR within spec;  
no mechanical damage  
Bending Strength  
Bending up to 2mm for 1cycle  
PACKING METHOD  
Product  
BAS216  
Quality/Reel  
5,000pcs  
Reel Size  
7”  
Tape  
Paper  
APPLICATIONS  
„
„
Function: Fast Switching  
Soldering Condition:  
Sn-Pb  
Leadfree  
Soldering  
<3oC/s  
Wave  
Recommended Profile Condition  
Ramp-up rate (from pre-heat stage)  
Pre-heat Temperature & Time  
Soldering  
Soldering  
T<150oC  
100-150 oC  
60-120s  
260±5oC  
5±2oC  
<3oC/s  
100-150 oC  
60-120s  
183 oC  
150-200 oC  
60-180s  
217 oC  
Soldering Temperature & Time  
60-150s  
230±5oC  
10-30s  
60-150s  
245±5oC  
20-40s  
Peak Temperature  
260±5oC  
-
Time within 5oC of peak temperature  
Ramp-down rate  
<6oC/s  
<6oC/s  
<6oC/s  
-
Time 25oC to peak temperature  
<6min  
<8min  
Manual Soldering: Approx. 350oC for 3s, avoid solder iron tip direct touch the components body  
„
Storage Condition: Product termination solderability can degrade due to high temperature and  
humidity or chemical environment. Storage condition must be in an ambient temperature of <40oC  
and ambient humidity of <80%RH, and free from chemical.  
http://www.luguang.cn  
mail:lge@luguang.cn  

相关型号:

BAS216,115

0.25A, 85V, SILICON, SIGNAL DIODE, CERAMIC PACKAGE-2
NXP

BAS216,135

0.25A, 85V, SILICON, SIGNAL DIODE, CERAMIC PACKAGE-2
NXP

BAS216/T1

DIODE HIGH SPEED
ETC

BAS216/T3

0.25A, 85V, SILICON, SIGNAL DIODE, CERAMIC PACKAGE-2
NXP

BAS216T/R

0.25A, 85V, SILICON, SIGNAL DIODE, CERAMIC PACKAGE-2
NXP

BAS216WS

High Speed Switching Diode
SEMTECH

BAS216WT

High Speed Switching Diode
SEMTECH

BAS216WT

Fast Switching Surface Mount Si-Planar Diodes
DIOTEC

BAS216_15

High Speed Switching Diode
WINNERJOIN

BAS21A

SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES
PANJIT

BAS21A

Surface mount switching diode
BL Galaxy Ele

BAS21A

Surface Mount Switching Diodes
KEXIN