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BAS40-06T [LGE]

Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管
BAS40-06T
型号： BAS40-06T
厂家： LGE    LGE
描述：

Surface Mount Schottky Barrier Diodes
表面贴装肖特基势垒二极管

二极管 光电二极管
文件： 总2页 (文件大小：310K)
中文：  中文翻译
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BAS40T/-04T/-05T/-06T  
Surface Mount Schottky Barrier Diodes  
SOT-523  
Features  
—
Low forward voltage drop.  
—
Fast switching.  
—
—
Ultra-small surface mount package.  
PN junction guard ring for transient and  
ESD protection.  
—
Dimensions in inches and (millimeters)  
Applications  
—
General purpose switching application.  
BAS40-05T  
BAS40-06T  
BAS40T  
BAS40-04T  
Ordering Information  
Type No.  
Marking  
Package Code  
BAS40T  
43  
44  
45  
46  
SOT-523  
SOT-523  
SOT-523  
SOT-523  
BAS40-04T  
BAS40-05T  
BAS40-06T  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC reverse voltage  
40  
V
VR(RMS)  
IF  
RMS reverse voltage  
28  
V
Forward continuous voltage  
200  
mA  
Non-repetitive peak forward surge current  
@t=1.0s  
IFSM  
mA  
600  
Pd  
Power dissipation  
150  
mW  
℃/W  
℃
RθJA  
Tj,Tstg  
Thermal resistance junction to ambient  
Junction and Storage Temperature  
833  
-65~150  
http://www.luguang.cn  
mail:lge@luguang.cn  
BAS40T/-04T/-05T/-06T  
Surface Mount Schottky Barrier Diodes  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Parameter  
Symbol  
Test conditions  
MIN  
MAX  
UNIT  
Reverse breakdown voltage  
V(BR)R  
IR=10μA  
40  
V
Leakage current  
Forward voltage  
IR  
VR=30V  
200  
nA  
IF=1.0mA,tp<300μS  
IF=40mA,tp<300μS  
380  
VF  
mV  
1000  
Typical total capacitance  
Reverse recovery Time  
CT  
trr  
VR=0V,f=1MHz  
5.0  
5.0  
pF  
ns  
IF=IR=10mA,Irr=0.1*IR,RL=100Ω  
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
http://www.luguang.cn  
mail:lge@luguang.cn  

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