BAS40-06W [NXP]
Schottky barrier double diodes; 肖特基势垒二极管双
| 型号： | BAS40-06W |
| 厂家： | 
NXP |
| 描述： | Schottky barrier double diodes |
| 文件： | 总8页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
BAS40W series
Schottky barrier (double) diodes
1999 Apr 26
Product specification
Supersedes data of 1997 Oct 28
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
FEATURES
PINNING
PIN
• Low forward voltage
BAS40
• Guard ring protected
• Very small SMD package
• Low diode capacitance.
W
-04W -05W -06W
3
1
2
3
a1
n.c.
k1
a1
k2
a1
a2
k1
k2
1
2
MLC358
k1, a2 k1, k2 a1, a2
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
Fig.3 BAS40-04W diode
configuration (symbol).
3
• Protection circuits
• Blocking diodes.
3
DESCRIPTION
1
2
1
2
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MBC870
Top view
MLC359
Fig.1 Simplified outline
(SOT323) and pin
configuration.
Fig.4 BAS40-05W diode
configuration (symbol).
MARKING
MARKING
TYPE NUMBER
CODE
3
3
BAS40W
63
64
65
66
1
2
1
2
BAS40-04W
BAS40-05W
BAS40-06W
n.c.
MLC360
MLC357
Fig.5 BAS40-06W diode
configuration (symbol).
Fig.2 BAS40W single diode
configuration (symbol).
1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
−
−
−
−
40
V
IF
120
mA
mA
mA
°C
IFRM
IFSM
Tstg
Tj
tp ≤ 1 s; δ ≤ 0.5
tp < 10 ms
120
200
−65
−
+150
150
junction temperature
°C
Tamb
operating ambient temperature
−65
+150
°C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
continuous forward voltage
see Fig.6
IF = 1 mA
380
500
1
mV
IF = 10 mA
mV
V
IF = 40 mA
IR
continuous reverse current
VR = 30 V; note 1; see Fig.7
VR = 40 V; note 1; see Fig.7
IF = 5 mA; Krakauer method
VR = 0; f = 1 MHz; see Fig.9
1
µA
µA
ps
pF
10
100
5
τ
charge carrier life time
diode capacitance
Cd
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
625
UNIT
Rth j-a
K/W
Note
1. Refer to SOT323 standard mounting conditions.
1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
GRAPHICAL DATA
MLC361 - 1
MLC362
3
2
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
I
F
(mA)
(1)
2
10
10
10
1
(2)
(1) (2) (3)
(4)
1
1
10
10
−1
10
(3)
−2
2
10
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1.0
V
(V)
R
V
(V)
F
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3)
Tamb = 25 °C.
(4) Tamb = −40 °C.
(3)
Tamb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
MLC363
MLC364
3
5
10
handbook, halfpage
handbook, halfpage
C
d
(pF)
4
r
diff
(Ω)
2
10
3
2
1
0
10
1
10
2
0
10
20
30
40
1
1
10
10
V
(V)
I
(mA)
R
F
f = 1 MHz; Tamb = 25 °C.
f = 10 KHz.
Fig.8 Differential forward resistance as a function
of forward current; typical values.
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
1999 Apr 26
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
1999 Apr 26
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 26
6
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
NOTES
1999 Apr 26
7
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SCA63
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Printed in The Netherlands
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Date of release: 1999 Apr 26
Document order number: 9397 750 05797
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