BAV23S [LGE]
Small Signal Diode; 小信号二极管型号: | BAV23S |
厂家: | LGE |
描述: | Small Signal Diode |
文件: | 总3页 (文件大小:221K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAV23S
Small Signal Diode
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1 GATE
2 SOURCE
3 DRAIN
Dimensions in inches and (millimeters)
Absolute Maximum Ratings *
T = 25°C unless otherwise noted
a
Symbol
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Value
250
Unit
V
VRRM
IF(AV)
IFSM
200
mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
9.0
3.0
A
A
Pulse Width = 100 microsecond
TSTG
TJ
Storage Temperature Range
-55 to +150
150
°C
°C
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
350
Unit
mW
PD
RθJA
Power Dissipation
Thermal Resistance, Junction to Ambient*
357
°C/W
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
Max
Units
VR
Breakdown Voltage
IR = 100µA
250
V
VF
IR
trr
Forward Voltage
IF = 100mA
IF = 200mA
1.0
1.25
V
V
Reverse Leakage
Reverse Recovery Time
VR = 250V
VR = 250V, TA = 150°C
100
100
nA
µA
IF = IR = 30mA, IRR = 3.0mA,
50
ns
RL = 100Ω
http://www.luguang.cn
mail:lge@luguang.cn
BAV23S
Small Signal Diode
Typical Performance Characteristics
http://www.luguang.cn
mail:lge@luguang.cn
BAV23S
Small Signal Diode
Typical Performance Characteristics (Continued)
400
300
200
100
300
250
200
150
100
50
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE (oC)
TA - AMBIENT TEMPERATURE (oC)
Figure 9. Power Derating Curve
Figure 10. Average Rectified Current(IO)
vs Ambient Temperature(TA)
Figure 11. Reverse Recovery Time vs
Reverse Recovery Current (Irr)
http://www.luguang.cn
mail:lge@luguang.cn
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