BC857AWG [LGE]

PNP Silicon Epitaxial Planar Transistor;


型号：	BC857AWG
厂家：	LGE
描述：	PNP Silicon Epitaxial Planar Transistor
文件：	总5页 (文件大小：1066K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PNP Silicon Epitaxial Planar Transistor

BC856W/BC857W/BC858W

FEATURES

Lead-free



For AF input stages and driver applications.

High current gain.

Low collector-emitter saturation voltage.

Low noise between 30Hz and 15 kHz.

Complementary types:BC846W,BC847W,BC848W.

APPLICATIONS



General purpose switching and amplification application.

SOT-323

ORDERING INFORMATION

Type No.

Marking

Package Code

BC856AW□/BC856BW□

BC857AW□/BC857BW□/BC857CW□

BC858AW□/BC858BW□/BC858CW□

3A/3B

3E/3F/3G

3J/3K/3L

SOT-323

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

BC856W

BC857W

BC858W

BC856W

BC857W

BC858W

-80

-50

-30

-65

-45

-30

V_CBO

Collector-Emitter Voltage

V_CEO

V_EBO

I_C

Emitter-Base Voltage

Collector Current -Continuous

Peak Collector current

Peak Base current

-5

-100

℃

I_CM

-200

I_BM

-200

P_C

Collector Dissipation

200

T_j,T_stg

Junction and Storage Temperature

-65 to +150

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

PNP Silicon Epitaxial Planar Transistor

BC856W/BC857W/BC858W

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX UNIT

I_C=-10μA,I_E=0

BC856W

BC857W

BC858W

BC856W

BC857W

BC858W

-80

-50

-30

-65

-45

-30

Collector-base breakdown

voltage

V_(BR)CBO

I_C=-10mA,I_B=0

Collector-emitter breakdown

voltage

V_(BR)CEO

Emitter-base breakdown

voltage

V_(BR)EBO

I_CBO

I_E=-1μA,I_C=0

-5

Collector cut-off current

Emitter cut-off current

V_CB=-30V,I_E=0

-15

μA

I_EBO

V_EB=-5V,I_C=0

-0.1

V_CE=-5V,I_C=-10μA

BC856AW,BC857AW,BC858AW

BC856BW,BC857BW,BC858BW

BC857CW,BC858CW

140

250

480

DC current gain

h_FE

V_CE=-5V,I_C=-2mA

BC856AW,BC857AW,BC858AW

BC856BW,BC857BW,BC858BW

BC857CW,BC858CW

125

220

420

180

290

520

250

475

800

Collector-emitter saturation

voltage

I_C=-10mA, I_B= -0.5mA

I_C=-100mA, I_B= -5mA

I_C=-10mA, I_B= -0.5mA

I_C=-100mA, I_B= -5mA

I_C=-2mA, V_CE=5V

-0.075 -0.3

-0.25 -0.65

-0.7

V_CE(sat)

Base-emitter saturation voltage V_BE(sat)

-0.85

-0.6

-0.75

Base-emitter voltage

V_BE(on)

f_T

MHz

I_C=-10mA, V_CE=5V

-0.82

Transition frequency

V_CE=-5V,I_C=-20mA,f=100MHz

V_CB=-10V,f=1MHz

250

Collector-base capacitance

Emitter-base capacitance

C_cb

C_eb

V_EB=-0.5V,f=1MHz

http://www.lgesemi.com

Revision:20170701-P2

mail:lge@lgesemi.com

PNP Silicon Epitaxial Planar Transistor

BC856W/BC857W/BC858W

http://www.lgesemi.com

Revision:20170701-P3

mail:lge@lgesemi.com

PNP Silicon Epitaxial Planar Transistor

BC856W/BC857W/BC858W

http://www.lgesemi.com

Revision:20170701-P4

mail:lge@lgesemi.com

PNP Silicon Epitaxial Planar Transistor

BC856W/BC857W/BC858W

PACKAGE OUTLINE

Plastic surface mounted package

SOT-323

Dim

Min

2.00

1.15

0.90

0.15

0.25

1.20

0.02

0.05

2.20

Max

2.20

1.35

1.10

0.35

0.40

1.40

0.10

0.15

2.40

All Dimensions in mm

SOLDERING FOOTPRINT

0.65 0.65

1.90

0.90

0.70

Unit : mm

PACKAGE INFORMATION

Device

Package

Shipping

3000/Tape&Reel

BC856W/BC857W/BC858W SOT-323

http://www.lgesemi.com

Revision:20170701-P5

mail:lge@lgesemi.com

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