DL4746 [LGE]
Zener Diodes; 齐纳二极管
| 型号： | DL4746 |
| 厂家： | 
LGE |
| 描述： | Zener Diodes |
| 文件： | 总3页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DL4728-DL4764
Zener Diodes
POWER DISSIPATION: 1.0 W
MELF
Features
Silicon planar power zener diodes
For use in stabilizing and clipping circuits with high
power rating.
Cathode indification
Standard zener voltage tolerance is ±10%. Add
suffix "A" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
±
0.4 0.1
5.3±0.2
Mechanical Data
Case:MELF, glass case
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode band
Dimensions in millimeters
Marking: type number
Approx. weight: 0.25 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener current (see Table "Characteristics")
Pow er dissipation @ Tamb 50
Z-current
1.01)
PV/VZ
PDiss
W
IZ
mA
Junction temperature
TJ
1751)
Storage temperature range
Junction ambient I=9.5mm(3/8 ), TL=constant
Ts
-55---+175
170
RThJA
K/W
SYMBOL
VF
MIN
TYP
MAX
1.2
UNIT
Forw ard voltage at IF=200mA
V
1)Valid provided that electrodes re kept at ambient temperature.
http://www.luguang.cn
mail:lge@luguang.cn
DL4728-DL4764
Zener Diodes
(TA=25
)
ELECTRICAL CHARACTERISTICS
Max surge
current
8.3ms
Maximum
regulator
current 2)
Nominal
Test
Maximum reverse
leakage current
Maximum dynamic impedance
zener
voltage 1)
current
Type
IR@Tamb
=25
IZM @Tamb
=50
Vz@IZT
IZT
IZT@ZZT ZZK@IZK
IZK
IR
@VR
(mA)
(V)
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
(mA)
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
(Ω)
10
10
9
9
8
7
5
2
3.5
4.0
4.5
5.0
7
(Ω)
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
(μA)
100
100
50
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
79.0
(mA)
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
(mA)
276
252
234
217
193
178
462
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
25
23
22
19
18
16
14
13
12
11
10
9
DL4728
DL4729
DL4730
DL4731
DL4732
DL4733
DL4734
DL4735
DL4736
DL4737
DL4738
DL4739
DL4740
DL4741
DL4742
DL4743
DL4744
DL4745
DL4746
DL4747
DL4748
DL4749
DL4750
DL4751
DL4752
DL4753
DL4754
DL4755
DL4756
DL4757
DL4758
DL4759
DL4760
DL4761
DL4762
DL4763
DL4764
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
90
80
70
65
60
55
50
45
1)Based on dc_measurement at theral equilibrium while maitaining the lead temperature (TL) at 30 +1 ,9.5mm(3/8")f rom the Diode body .
2)Valid prov ided that electrodes at a distance of 10 mm f orm case kept at ambient temperature.
*)Additionnal measurement of v oltage gruup 9v 1 to 75 at 95% VZMIN
35nA at TJ25
DL4728-DL4764
Zener Diodes
Ratings AND Charactieristic Curves
FIG.1 -- BREAKDOWN CHARACTERISTICS
mA
5
10
15
20
25
30 V
100
80
IZ
60
40
20
0
VZ
FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
W
1.0
0.8
Ptot
0.6
0.4
0.2
0
℃
0
100
200
Tamb
http://www.luguang.cn
mail:lge@luguang.cn
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