LL4934G [LGE]

1.0AMP. Surface Mount Glass Plassivated Silicon Rectifiers; 1.0AMP 。表面安装玻璃Plassivated矽整流器
LL4934G
型号: LL4934G
厂家: LGE    LGE
描述:

1.0AMP. Surface Mount Glass Plassivated Silicon Rectifiers
1.0AMP 。表面安装玻璃Plassivated矽整流器

文件: 总2页 (文件大小:218K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LL4933G-LL4937G  
1.0AMP. Surface Mount Glass Plassivated Silicon Rectifiers  
MELF  
Features  
Plastic package has carries underwriters  
laboratory flammability classification 94V-0.  
Surge overload rating to 30 amperes peak  
Ideal for printed circuit board  
Reliable low cost construction utilizing molded  
plastic technique results in inexpensive  
product  
High temperature soldering guaranteed:  
o
260 C / 10 seconds at terminals.  
Mechanical Data  
Mounting position: Any  
Weight: 0.12 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
LL  
LL  
LL  
LL  
LL  
Symbol  
Maximum Recurrent Peak Reverse Voltage VRRM  
Type Number  
Units  
4933G 4934G 4935G 4936G 4937G  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum RMS Voltage  
VRMS  
VDC  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
100  
I(AV)  
1.0  
30  
A
A
V
o
@TA = 75 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated Load  
(JEDEC method )  
IFSM  
Maximum Instantaneous Forward Voltage  
@1.0A  
VF  
IR  
1.2  
o
5
uA  
uA  
Maximum DC Reverse Current @ TA=25 C  
o
at Rated DC Blocking Voltage @ TA=125 C  
100  
Maximum Reverse Recovery Time(Note 3)  
Typical Junction Capacitance ( Note 1 )  
Typical Thermal Resistance (Note 2)  
Trr  
Cj  
150  
nS  
pF  
15  
60  
o
R
θJC  
C/W  
o
Operating and Storage Temperature Range  
TJ,TSTG  
- 65 to + 150  
C
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.  
2. Thermal Resistance from Junction to case. Mount on 0.2” x 0.2” Cu-pad on P.C.B.  
3. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Notes:  
http://www.luguang.cn  
mail:lge@luguang.cn  
LL4933G-LL4937G  
1.0AMP. Surface Mount Glass Plassivated Silicon Rectifiers  
RATINGS AND CHARACTERISTIC CURVES (LL4933G THRU LL4937G)  
FIG.1- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG.2- TYPICAL FORWARD CHARACTERISTICS  
1.0  
0.8  
0.6  
0.4  
20  
10  
3
1
P.C.B. MONTED ON 0.2X0.2"  
(5.0X5.0mm)COPPER AREAS PADS  
0.2  
0
0.3  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
AMBIENT TEMPERATURE. (oC)  
FIG.3- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
Tj=25oC  
Pulse Width=300  
1% Duty Cycle  
0.03  
30  
20  
10  
0
s
TJ=750C  
8.3ms Single Half Sine Wave  
JEDEC Method  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
FORWARD VOLTAGE. (V)  
FIG.5- TYPICAL REVERSE CHARACTERISTICS  
1000  
1.0 CYCLE  
1
2
4
6
8
10  
20  
40 60 80 100  
NUMBER OF CYCLES AT 60Hz  
TJ=1250C  
100  
FIG.4- TYPICAL JUNCTION CAPACITANCE  
20  
10  
TJ=750C  
Tj=250C  
10  
TJ=250C  
f=1 MHz  
Vsig=50mVp-p  
1
1
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
REVERSE VOLTAGE. (V)  
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
50  
10  
trr  
NONINDUCTIVE  
NONINDUCTIVE  
+0.5A  
(-)  
DUT  
(+)  
PULSE  
GENERATOR  
(NOTE 2)  
0
50Vdc  
(approx)  
(-)  
-0.25A  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
NON  
INDUCTIVE  
-1.0A  
NOTES: 1. Rise Time=7ns max. Input Impedance=  
1 megohm 22pf  
1cm  
SET TIME BASE FOR  
5/ 10ns/ cm  
2. Rise Time=10ns max. Sourse Impedance=  
50 ohms  
http://www.luguang.cn  
mail:lge@luguang.cn  

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