MBR10H150CT [LGE]

10.0AMP. Schottky Barrier Rectifiers; 10.0AMP 。肖特基势垒整流器
MBR10H150CT
型号: MBR10H150CT
厂家: LGE    LGE
描述:

10.0AMP. Schottky Barrier Rectifiers
10.0AMP 。肖特基势垒整流器

文件: 总2页 (文件大小:127K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR10H100CT-MBR10H200CT  
10.0AMP. Schottky Barrier Rectifiers  
TO-220AB  
Features  
—
Plastic material used carries Underwriters  
Laboratory Classifications 94V-0  
—
—
—
—
—
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in power supply – output rectification, power  
management, instrumentation  
—
—
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
—
Cases: JEDEC TO-220AB molded plastic body  
—
—
—
—
Polarity: As marked  
Dimensions in inches and (millimeters)  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
Rating at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR  
MBR  
MBR  
Units  
Type Number  
Symbol  
10H100CT 10H150CT 10H200CT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
VRRM  
VRMS  
VDC  
100  
70  
100  
150  
105  
150  
200  
140  
200  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
I(AV)  
IFRM  
IFSM  
IRRM  
10  
32  
at Tc=125OC  
A
A
A
Peak Repetitive Forward Current (Rated VR,  
Square Wave, 20KHz) at Tc=125oC  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
120  
Peak Repetitive Reverse Surge Current (Note 1)  
A
V
1.0  
0.5  
Maximum Instantaneous Forward Voltage at:  
(Note 2)  
IF=5A, TC=25oC  
IF=5A, TC=125oC  
IF=10A, TC=25oC  
IF=10A, TC=125oC  
0.85  
0.75  
0.95  
0.85  
0.88  
0.75  
0.97  
0.85  
VF  
Maximum Instantaneous Reverse Current  
@ Tc =25 oC at Rated DC Blocking Voltage  
5
uA  
mA  
IR  
@ Tc=125 oC  
(Note 2)  
1.0  
Voltage Rate of Change (Rated VR)  
V/uS  
dV/dt  
10,000  
Maximum Typical Thermal Resistance (Note 3)  
oC/W  
R
θJC  
1.5  
oC  
Operating Junction Temperature Range  
Storage Temperature Range  
-65 to +175  
-65 to +175  
TJ  
TSTG  
oC  
Notes:  
1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in  
Al-Plate.  
http://www.luguang.cn  
mail:lge@luguang.cn  
MBR10H100CT-MBR10H200CT  
10.0AMP. Schottky Barrier Rectifiers  
RATINGS AND CHARACTERISTIC CURVES (MBR10H100CT THRU MBR10H200CT)  
FIG.1- FORWARD CURRENT DERATING CURVE  
FIG.2- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
12  
10  
8
180  
150  
120  
90  
RESISTIVE OR  
INDUCTIVE LOAD  
Tj=Tj max.  
8.3ms Single Half Sine-Wave  
JEDEC Method  
6
60  
4
30  
2
0
0
25  
100  
75  
100  
1
0
50  
125  
150  
175  
10  
CASE TEMPERATURE. (oC)  
NUMBER OF CYCLES AT 60Hz  
FIG.3- TYPICAL FORWARD CHARACTERISTICS  
FIG.4- TYPICAL REVERSE CHARACTERISTICS  
5
1
Tj=25oC  
Pulse Width=300  
1% Duty Cycle  
100  
s
Tj=1250C  
Tj=1250C  
0.1  
0.01  
10  
5
Tj=250C  
Tj=750C  
1
0.001  
0.0001  
Tj=250C  
0
20  
40  
60  
80  
100  
120  
140  
0.1  
0
0.2  
0.4  
0.6  
FORWARD VOLTAGE. (V)  
0.8  
1.0  
1.2  
1.4  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FIG.6- TYPICAL TRANSIENT THERMAL  
CHARACTERISTICS PER LEG  
FIG.5- TYPICAL JUNCTION CAPACITANCE  
100  
10.0  
1
5,000  
Tj=250C  
f=1.0MHz  
Vsig=50mVp-p  
1,000  
500  
0.1  
0.01  
100  
0.1  
0.1  
1
10  
100  
1.0  
10  
REVERSE VOLTAGE. (V)  
100  
T, PULSE DURATION. (sec)  
http://www.luguang.cn  
mail:lge@luguang.cn  

相关型号:

MBR10H150CT-E3

DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY

MBR10H150CT-E3/45

Dual Common-Cathode High-Voltage Schottky Rectifier
VISHAY

MBR10H150CT-E3/45

Dual Common-Cathode High-Voltage Schottky Rectifier
KERSEMI

MBR10H150CTE3

DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY

MBR10H150CT_07

Dual Common-Cathode High-Voltage Schottky Rectifier
VISHAY

MBR10H150CT_08

Dual Common-Cathode High-Voltage Schottky Rectifier
VISHAY

MBR10H150CT_T0_00001

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
PANJIT

MBR10H150DC

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
PANJIT

MBR10H150DC_R2_00001

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
PANJIT

MBR10H150FCT

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
PANJIT

MBR10H150FCT_T0_00001

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
PANJIT

MBR10H15_15

Dual Common Cathode High Voltage Schottky Rectifier
VISHAY