MBR10H15_15 [VISHAY]
Dual Common Cathode High Voltage Schottky Rectifier;
| 型号： | MBR10H15_15 |
| 厂家： | 
VISHAY |
| 描述： | Dual Common Cathode High Voltage Schottky Rectifier |
| 文件： | 总5页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
FEATURES
TO-220AB
ITO-220AB
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
3
3
2
2
1
1
• Solder dip 275 °C max.10 s, per JESD 22-B106
MBRF10H150CT
MBR10H150CT
TO-262AA
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
MECHANICAL DATA
3
2
1
Case: TO-220AB, ITO-220AB, TO-262AA
SB10H150CT-1
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
PIN 1
PIN 3
PIN 2
CASE
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5 A
Polarity: As marked
VRRM
150 V
Mounting Torque: 10 in-lbs maximum
IFSM
160 A
0.72 V
VF
TJ max.
Package
Diode variations
175 °C
TO-220AB, ITO-220AB, TO-262AA
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
VALUE
150
150
150
10
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
V
V
V
VRWM
VDC
Maximum DC blocking voltage
total device
Maximum average forward rectified current (fig.1)
per diode
IF(AV)
IFSM
A
A
5
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
160
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 waveform)
Non-repetitve avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
IRRM
ERSM
EAS
1.0
10
A
mJ
mJ
V/μs
°C
11.25
dV/dt
TJ, TSTG
VAC
10 000
-65 to +175
1500
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
V
Revision: 11-Dec-14
Document Number: 88779
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
0.88
0.72
0.96
0.80
5.0
UNIT
IF = 5 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
-
-
-
-
-
-
IF = 5 A
Maximum instantaneous forward voltage
per diode
(1)
VF
V
IF = 10 A
IF = 10 A
μA
Maximum reverse current per diode at
working peak reverse voltage
(2)
IR
1.0
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
2.4
UNIT
Typical thermal resistance per diode
RJC
2.4
4.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-262AA
PREFERRED P/N
MBR10H150CT-E3/45
MBRF10H150CT-E3/45
SB10H150CT-1E3/45
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
2.06
2.20
1.58
45
45
45
Tube
Tube
Tube
50/tube
50/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
10
8
200
MBR, MBRB
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
180
160
140
120
MBRF
6
100
80
60
40
20
0
4
2
0
25
50
75
100
125
150
175
1
10
Number of Cycles at 60 Hz
100
Case Temperature (°C)
Fig. 1 - Forward Derating Curve (Total)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 11-Dec-14
Document Number: 88779
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
100
10
10 000
1000
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
100
1
TJ = 25 °C
10
0.1
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10 000
100
10
TJ = 175 °C
1000
TJ = 125 °C
100
MBRF
10
MBR, MBRB
TJ = 75 °C
1
1
TJ = 25 °C
0.1
0.1
0.01
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 11-Dec-14
Document Number: 88779
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
0.398 (10.10)
0.185 (4.70)
0.408(10.36)
0.392(9.96)
0.382 (9.70)
1.29 (3.28)
DIA.
1.21 (3.08)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.055 (1.40)
0.047 (1.20)
0.343 (8.70)
TYP.
0.138(3.50)
0.122(3.10)
0.270(6.88)
0.255(6.48)
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.638 (16.20)
0.598 (15.20)
0.633(16.07)
0.601(15.67)
0.331(8.40)
TYP.
0.630(16.00)
0.614(15.60)
0.634 (16.10)
0.618 (15.70)
0.320(8.12)
0.304(7.72)
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
0.264(6.70)
0.248(6.50)
PIN
PIN
2
1
2
3
1
3
1.106 (28.08)
0.118 (3.00)
TYP.
0.102 (2.60)
0.087 (2.20)
0.117(2.96)
0.101(2.56)
0.523 (13.28)
0.507 (12.88)
0.396(10.05)
0.372(9.45)
0.035 (0.90)
0.028 (0.70)
0.039(1.00)
0.024(0.60)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.100 (2.54)
TYP.
0.024 (0.60)
0.018 (0.45)
0.058(1.47)
MAX.
0.024 (0.60)
0.018 (0.45)
0.100
(2.54)TYP.
0.200 (5.08)
TYP.
TO-262AA
0.185 (4.70)
0.169 (4.30)
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.039 (1.00)
0.055 (1.40)
0.049 (1.25)
K
0.425 (10.80)
0.393 (10.00)
0.370 (9.40)
0.354 (9.00)
PIN
2
0.488 (12.4)
0.472 (12.00)
1
3
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.405 (10.28)
0.389 (9.88)
0.035 (0.90)
0.028 (0.70)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) TYP.
0.200 (5.08) TYP.
Revision: 11-Dec-14
Document Number: 88779
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
Document Number: 91000
1
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